Low-Resistance Nonalloyed Ti/Al Ohmic Contacts on N-Face n-Type GaN via an O2 Plasma Treatment

被引：19

作者：

Kim, Su Jin ^{[1
]}

Nam, Tae Yang ^{[1
]}

Kim, Tae Geun ^{[1
]}

机构：

[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 02期

关键词：

GaN; N-face; ohmic contacts; oxygen plasma; CRYSTAL POLARITY;

D O I：

10.1109/LED.2010.2093556

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report improved electrical properties of nonalloyed Ti/Al ohmic contact to N-face n-type GaN via oxygen (O-2) plasma treatment. The contact resistivity of Ti (50 nm)/Al (35 nm) electrodes is reduced significantly from 4.3 x 10(-1) Omega.cm(2) to 2.53 x 10(-5) Omega.cm(2) by applying O-2 plasma to the GaN surface before the Ti/Al deposition. In this process, Ti-N bonds are expected to form, while the Ga-N bonds are broken by the O-2 plasma, which eventually increases the nitrogen vacancies as well as the Ti-N phases at the GaN surface. This suggestion has been verified by X-ray photoelectron spectroscopy and transmission electron microscopy analyses.

引用

页码：149 / 151

页数：3

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