Damage kinetics induced by swift heavy ion impacts onto films of different thicknesses

被引:16
作者
Rymzhanov, R. A. [1 ,2 ]
Medvedev, N. [3 ,4 ]
Volkov, A. E. [5 ]
机构
[1] Joint Inst Nucl Res, Joliot Curie 6, Dubna 141980, Moscow Region, Russia
[2] Inst Nucl Phys, Ibragimov St 1, Alma Ata 050032, Kazakhstan
[3] Czech Acad Sci, Inst Phys, Slovance 2, Prague 18221 8, Czech Republic
[4] Czech Acad Sci, Inst Plasma Phys, Slovankou 3, Prague 18200 8, Czech Republic
[5] Russian Acad Sci, PN Lebedev Phys Inst, Leninskij Pr 53, Moscow 119991, Russia
基金
俄罗斯科学基金会;
关键词
Electronic excitation; Thin film; Surface damage; Swift heavy ion; Electron emission; Nanocluster emission; MOLECULAR-DYNAMICS; IRRADIATION; MORPHOLOGY; TRANSPORT; ELECTRON; EMISSION;
D O I
10.1016/j.apsusc.2021.150640
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Response of CaF2 thin films to swift heavy ions irradiation is studied with Monte-Carlo code TREKIS and molecular dynamics simulations. Two factors affecting the damage kinetics in ion tracks in films of different thickness are considered: electron emission and an effect of the layer thickness. It is shown that escape of electrons from the target surface is important in films thinner than 15 nm and can significantly reduce energy deposited into the lattice. Three different modes of damage realize depending on the layer thickness: a through hole forms in the thinnest layers despite energy loss via electron emission, semispherical and spherical hillocks form at intermediate thicknesses, emission of nanoclusters occurs from thick layers.
引用
收藏
页数:10
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