Slow positron annihilation studies on helium irradiated tungsten

被引：7

作者：

Cui, Minghuan ^{[1
]}

Yao, Cunfeng ^{[1
]}

Shen, Tielong ^{[1
]}

Pang, Lilong ^{[1
]}

Zhu, Yabin ^{[1
]}

Li, Bingsheng ^{[1
]}

Cao, Xingzhong ^{[2
]}

Zhang, Peng ^{[2
]}

Sun, Jianrong ^{[1
]}

Zhu, Huiping ^{[3
]}

Wang, Ji ^{[4
]}

Gao, Xing ^{[1
]}

Gao, Ning ^{[1
]}

Chang, Hailong ^{[1
]}

Sheng, Yanbin ^{[1
]}

Zhang, Hongpeng ^{[1
]}

Wang, Zhiguang ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China

[2] Chinese Acad Sci, Key Lab Nucl Anal Tech, Inst High Energy Phys, Beijing 100049, Peoples R China

[3] North China Elect Power Univ, Beijing 102206, Peoples R China

[4] Chinese Acad Sci, Ningbo Inst Ind Technol, Ningbo 315200, Zhejiang, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2017年 / 406卷

基金：

中国国家自然科学基金;

关键词：

Doppler broadening spectroscopy; Helium irradiation; Tungsten; HEAVY-ION IRRADIATION; INDUCED DEFECTS; BEHAVIOR; MICROSTRUCTURE; EVOLUTION; DYNAMICS; DAMAGE;

D O I：

10.1016/j.nimb.2017.03.127

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Pure tungsten samples were irradiated to 1.0 x 10(16), 5.0 x 10(16) and 1.0 x 10(17) ions/cm(2) at room temperature with 500 and 200 keV helium ions, respectively, to understand the growth of vacancy like defects in tungsten induced by helium irradiation. The doppler broadening spectroscopy of slow positron annihilation was used to characterize the behavior of vacancy like defects, such as HeliumnVacancym (i.e. HenVm) complexes, induced by He irradiation. When the irradiation fluence is below 1.0 x 10(17) ions/cm(2), the size and density of vacancy like defects show increasing trends with increasing fluences. The density of vacancy like defects decreases with increasing depths due to the increasing amounts or n/m ratios in HenVm complexes. When the ratios reach certain values, the size of vacancy like defects increases. When the 200 keV He irradiation fluence increases to 1.0 x 10(17) ions/cm(2), the size of vacancy like defects decreases. When the 500 keV He irradiation fluence increases to 1.0 x 10(17) ions/cm(2), the size and density of vacancy like defects grow larger. The formation and evolution of irradiation induced defects and the growth mechanism of HenVm complexes are discussed in this paper on the bases of dpa levels, He concentrations, C-He/dpa ratios and electronic energy loss depositions. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：578 / 584

页数：7

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