Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers

被引：44

作者：

Andre, Yamina ^{[1
]}

Trassoudaine, Agnes ^{[1
]}

Tourret, Julie ^{[1
]}

Cadoret, R. ^{[1
]}

Gil, Evelyne ^{[1
]}

Castelluci, Dominique ^{[1
]}

Aoude, Ouloum ^{[1
]}

Disseix, Pierre ^{[1
]}

机构：

[1] Univ Clermont Ferrand 2, LASMEA, CNRS, UMR 6602, F-63177 Clermont Ferrand, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 306卷 / 01期

关键词：

low dislocation density; HVPE; thick layers; GaN;

D O I：

10.1016/j.jcrysgro.2006.12.081

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thick high quality gallium nitride (GaN) layers presenting a dislocation density reduced to 6 x 10(6) cm(-2) were grown by hydride vapour phase epitaxy (HVPE). Scanning electron microscopy (SEM) characterizations, X-ray double diffraction (XRD) measurements, photoluminescence and reflectivity experiments, both at 4.5 K have been carried out to reveal the optical and the structural properties of the GaN epilayers. The strain relaxation was studied as a function of increasing the thickness. Special emphasis has been placed to the control of the parasitic nucleation on the reactor wall upstream the substrate, which consistently appears for long-time growth experiments. The amount of the parasitic deposit was quantitatively assessed by theoretical modelling. Attention was paid to accurate characterizations of 450 mu m thick GaN layers obtained via thickening through a regrowth step after growth interruption and strain relaxation on cooling the templates. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：86 / 93

页数：8

共 30 条

[1] Influence of the partial pressure of GaCl3 in the growth process of GaN by HVPE under nitrogen [J].