Low-loss buried AlGaAs/AlOx waveguides using a quasi-planar process

被引:3
|
作者
Calvez, Stephane [1 ]
Calmon, Pierre-Francois [1 ]
Arnoult, Alexandre [1 ]
Gauthier-Lafaye, Olivier [1 ]
Fontaine, Chantal [1 ]
Almuneau, Guilhem [1 ]
机构
[1] Univ Toulouse, CNRS, LAAS, 7 Ave Colonel Roche, F-31400 Toulouse, France
来源
OPTICS EXPRESS | 2017年 / 25卷 / 16期
关键词
OXIDATION; LASERS;
D O I
10.1364/OE.25.019275
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this paper, we demonstrate that buried oxide-confined waveguides can be formed using a lateral oxidation process carried out through a discrete set of small-diameter via-holes instead of the conventional scheme where the oxidation starts from the edges of etched mesas. The via-hole oxidation is shown to lead to straight waveguides with smooth oxide/semiconductor interfaces and whose propagation losses are similar to one obtained using the standard process but with the advantage of maintaining a quasi-planar wafer surface. It thereby paves the way towards a simplification of the fabrication of III-Vsemiconductor-oxide photonic devices. (C) 2017 Optical Society of America
引用
收藏
页码:19275 / 19280
页数:6
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