p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells

被引：28

作者：

Chin, Ken K. ^{[1
,2
]}

机构：

[1] NJIT, Dept Phys, Newark, NJ 07058 USA

[2] NJIT, Apollo CdTe Solar Energy Res Ctr, Newark, NJ 07058 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 10期

关键词：

CdTe; p-Doping; Hole density; Non-shallow; Acceptor; Activation energy;

D O I：

10.1016/j.solmat.2010.05.006

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Experimental evidence shows that non-shallow acceptor states defect complex V-cd-Cl-Te vertical bar(0/-) and Cu substitution of Cd Cu-cd vertical bar(0/-) play critical roles in p-doping of CdTe in CdS/CdTe thin film solar cells. In this work, two equations are presented by using graphic method, one to determine the limit of p-doping or hole density for such non-shallow acceptor levels, and another to show the quantitative relationship of n-type donor compensation of p-type acceptors in such a material. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1627 / 1629

页数：3

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