The influence of a concave corner on the characteristics of deep-sub-micrometre grooved-gate PMOSFETs

被引：0
作者：
Ren, HX [1 ]
Hao, Y [1 ]
机构：
[1] Xidian Univ, Inst Microelect, Xian 710071, Shaanxi, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2001年 / 16卷 / 05期
关键词：
D O I：
10.1088/0268-1242/16/5/306
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To improve the performance and reliability of grooved gate MOSFETs, the effects of a concave corner on the characteristics of deep sub-micrometre grooved-gate PMOSFETs are studied using the device simulator MEDICI. The results of our study indicate that the concave corner of a recessed gate influences device characteristics strongly. With an increase of the concave corner, the threshold voltage increases, the current driving capability is improved and the hot-carrier effect is decreased.
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页码：310 / 314
页数：5
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