Novel Energy-Dependent Effects Revealed in GeV Heavy-Ion-Induced Transient Measurements of Antimony-Based III-V HEMTs

被引：13

作者：

McMorrow, Dale ^{[1
]}

Warner, Jeffrey ^{[1
]}

DasGupta, Sandeepan ^{[2
]}

Ramachandran, Vishwa ^{[2
]}

Boos, J. Brad ^{[1
]}

Reed, Robert ^{[2
]}

Schrimpf, Ronald ^{[2
]}

Paillet, Philippe ^{[4
]}

Ferlet-Cavrois, Veronique ^{[4
]}

Baggio, Jacques ^{[4
]}

Buchner, Stephen ^{[1
,3
]}

El-Mamouni, Farah ^{[2
]}

Raine, Melanie ^{[4
]}

Duhamel, Olivier ^{[4
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Vanderbilt Univ, Dept Elect Engn, Nashville, TN 37235 USA

[3] GTEC, Crofton, MD 21114 USA

[4] CEA, DIF, F-91297 Arpajon, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 06期

关键词：

Charge collection; high-electron-mobility transistor (HEMT); indium arsenide (InAs); ion radiation effects; single-event effect (SEE); single-event transient; CHARGE-COLLECTION; ALSB/INAS HEMTS; LOW-VOLTAGE; SPEED; TRANSISTORS; MOBILITY;

D O I：

10.1109/TNS.2010.2086487

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-bandwidth (16 GHz) time-resolved charge-collection measurements for heavy-ion irradiation of up to 70 GeV/amu are performed on low-power 6.1 angstrom lattice spacing InAlSb/InAs HEMT devices. Event cross sections are measured to be significantly larger than the active areas of the devices. Novel energy-dependent effects are observed.

引用

页码：3358 / 3365

页数：8