Theoretical calculations of the mean escape depth of secondary electron emission from compound semiconductor materials

We have performed a systematic Monte Carlo simulation of primary and secondary electron trajectories to predicate the mean escape depth of secondary electron emission for six compound semiconductors, i.e., TiN, VN, GaAs, InAs, InSb, and PbS. Mott's cross section is used for the description of electron elastic scattering in the simulation model, and the full-Penn's dielectric function approach is adopted for the modeling of electron inelastic scattering, where the energy loss function obtained with the optical data is contributed from phonon excitation, interband transition of the loosely bound valance electrons, and inner-shell electron excitations. We have calculated the excitation depth distribution function, emission depth distribution function, and their combining effect in probability depth distribution function at different primary energies for the excited and emitted secondary electrons in these materials. The calculation leads to the primary energy dependence of mean escape depth whose values are found in the range of 0.4-1.4nm for these materials.