InN-based anion selective sensors in aqueous solutions

被引：58

作者：

Lu, Yen-Sheng

Huang, Chi-Cheng

Yeh, J. Andrew ^{[1
]}

Chen, Chi-Fan

Gwo, Shangjr

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Inst Nanoengn & Microsyst, Dept Phys, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 20期

关键词：

D O I：

10.1063/1.2814035

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that indium nitride (InN) can be used as ion selective electrode (ISE) for anion concentration measurements. The InN ISE reveals remarkable selectivity, response time, signal stability, and repeatability for chlorine and hydroxyl ions. The selective interaction of Lewis bases in solutions with the N-polarity InN epitaxial layer grown on silicon is confirmed by potentiometric responses. The Helmholtz potential of the InN ISE, generated at the InN/solution interface, satisfies the Nernst equation. The observation of anion attraction to the InN surface further demonstrates the existence of donor-type surface states on InN. (c) 2007 American Institute of Physics.

引用

收藏

页数：3

相关论文

共 22 条

[1] Indium nitride (InN): A review on growth, characterization, and properties [J].

Bhuiyan, AG ;

Hashimoto, A ;

Yamamoto, A .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :2779-2808

[2] GaN-based anion selective sensor: Probing the origin of the induced electrochemical potential [J].

Chaniotakis, NA ;

Alifragis, Y ;

Georgakilas, A ;

Konstantinidis, G .

APPLIED PHYSICS LETTERS, 2005, 86 (16) :1-3

[3] Gallium nitride-based potentiometric anion sensor [J].

Chaniotakis, NA ;

Alifragis, Y ;

Konstantinidis, G ;

Georgakilas, A .

ANALYTICAL CHEMISTRY, 2004, 76 (18) :5552-5556

[4] Organosilane functionalization of InN surface [J].

Chen, Chi-Fan ;

Wu, Chung-Lin ;

Gwo, Shangjr .

APPLIED PHYSICS LETTERS, 2006, 89 (25)

[5] Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature [J].

Gwo, S ;

Wu, CL ;

Shen, CH ;

Chang, WH ;

Hsu, TM ;

Wang, JS ;

Hsu, JT .

APPLIED PHYSICS LETTERS, 2004, 84 (19) :3765-3767

[6] Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces [J].

King, P. D. C. ;

Veal, T. D. ;

McConville, C. F. ;

Fuchs, F. ;

Furthmueller, J. ;

Bechstedt, F. ;

Schley, P. ;

Goldhahn, R. ;

Schoermann, J. ;

As, D. J. ;

Lischka, K. ;

Muto, D. ;

Naoi, H. ;

Nanishi, Y. ;

Lu, Hai ;

Schaff, W. J. .

APPLIED PHYSICS LETTERS, 2007, 91 (09)

[7] Pt-coated InN nanorods for selective detection of hydrogen at room temperature [J].

Kryliouk, O ;

Park, HJ ;

Wang, HT ;

Kang, BS ;

Anderson, TJ ;

Ren, F ;

Pearton, SJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (05) :1891-1894

[8] Fermi-level stabilization energy in group III nitrides [J].

Li, SX ;

Yu, KM ;

Wu, J ;

Jones, RE ;

Walukiewicz, W ;

Ager, JW ;

Shan, W ;

Haller, EE ;

Lu, H ;

Schaff, WJ .

PHYSICAL REVIEW B, 2005, 71 (16)

[9]

Long JP, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.121308

[10] Surface chemical modification of InN for sensor applications [J].

Lu, H ;

Schaff, WJ ;

Eastman, LF .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (06) :3577-3579