Direct measurement of the spin polarization of the magnetic semiconductor (Ga,Mn)As

被引：111

作者：

Braden, JG ^{[1
]}

Parker, JS

Xiong, P

Chun, SH

Samarth, N

机构：

[1] Florida State Univ, MARTECH, Tallahassee, FL 32306 USA

[2] Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA

[3] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.91.056602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have carried out a direct measurement of the degree of spin polarization (P) of the magnetic semiconductor Ga1-xMnxAs using Andreev reflection spectroscopy. Analyses of the conductance spectra of high transparency Ga0.95Mn0.05As/Ga junctions consistently yield an intrinsic value for P greater than 85%. Our experiments also revealed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for this material.

引用

页码：566021 / 566024

页数：4

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