Advances in HgTe Colloidal Quantum Dots for Infrared Detectors

被引：8

作者：

Buurma, Christopher ^{[1
]}

Ciani, Anthony J. ^{[1
]}

Pimpinella, Richard E. ^{[1
]}

Feldman, Jered S. ^{[1
]}

Grein, Christoph H. ^{[1
]}

Guyot-Sionnest, Philippe ^{[2
]}

机构：

[1] Sivananthan Labs, 590 Terr Dr Ste H, Bolingbdook, IL 60440 USA

[2] Univ Chicago, James Franck Inst, 929 East 57th St, Chicago, IL 60637 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2017年 / 46卷 / 11期

关键词：

Colloidal quantum dots; focal plane array; long wavelength infrared; PHOTODETECTORS;

D O I：

10.1007/s11664-017-5720-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

HgTe-based colloidal quantum dots (CQDs) fabricated between 10 nm and 20 nm in size readily lead to infrared cutoff wavelengths between 3 mu m and 12 mu m, due to their quantum confinement. In previous work, infrared photodetection using these films has been demonstrated to detect radiation out to a wavelength of 12 mu m, and imaging in the mid-wave infrared region. In this work, a complete focal plane array and imager was fabricated and its performance measured for detecting radiation out to 12 mu m. The photoconductive and optical properties of these HgTe CQD films are described, along with recent advancements in CQD detector technology. Anticipated improvements in the CQD synthesis and film deposition chemistries and techniques can raise the specific detectivity of these CQD films, bringing them closer to room-temperature operation.

引用

页码：6685 / 6688

页数：4