Nonlinear Relaxational Polarization in Aluminum Oxide

被引:12
作者
Kankate, L. [1 ]
Gratsov, A. [1 ]
Kliem, H. [1 ]
机构
[1] Univ Saarland, Inst Elect Engn Phys, D-66123 Saarbrucken, Germany
关键词
Relaxational polarization; asymmetric double well potential; capacitance; Kohlrausch relaxations; HYDROGEN; DEPOSITION; PROFILES;
D O I
10.1109/TDEI.2015.7076825
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Frequency and electric field dependent measurements of the complex capacitance on Al2O3 based metal-insulator-metal capacitors were conducted. A nonlinear relaxational polarization in Al2O3 was investigated systematically by means of varying the thickness of the dielectric and characterizing samples at various temperatures. Employing the asymmetric double well potential model, where the charges fluctuate between two potential minima, we show that the relaxational polarization in metal oxide can be interpreted.
引用
收藏
页码:1220 / 1231
页数:12
相关论文
共 17 条
[2]   Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides -: art. no. 052902 [J].
Bécu, S ;
Crémer, S ;
Autran, JL .
APPLIED PHYSICS LETTERS, 2006, 88 (05) :1-3
[3]   Investigation and modeling of the electrical properties of metal-oxide-metal structures formed from chemical vapor deposited Ta2O5 films [J].
Blonkowski, S ;
Regache, M ;
Halimaoui, A .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (03) :1501-1508
[4]  
Cho HJ, 2006, PROC EUR S-STATE DEV, P146
[5]   Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high-k metal-insulator-metal capacitors [J].
El Kamel, F. ;
Gonon, P. ;
Vallée, C. .
APPLIED PHYSICS LETTERS, 2007, 91 (17)
[6]   Al2O3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001) [J].
Gao, KY ;
Seyller, T ;
Ley, L ;
Ciobanu, F ;
Pensl, G ;
Tadich, A ;
Riley, JD ;
Leckey, RGC .
APPLIED PHYSICS LETTERS, 2003, 83 (09) :1830-1832
[7]   Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications [J].
Hu, H ;
Zhu, CX ;
Lu, YF ;
Wu, YH ;
Liew, T ;
Li, MF ;
Cho, BJ ;
Choi, WK ;
Yakovlev, N .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) :551-557
[8]   TIME-DEPENDENT DIELECTRIC SUSCEPTIBILITY IN HIGH ELECTRIC-FIELDS [J].
KLIEM, H ;
SCHUMACHER, B .
IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1987, 22 (02) :219-224
[9]   DIELECTRIC SMALL-SIGNAL RESPONSE BY PROTONS IN AMORPHOUS INSULATORS [J].
KLIEM, H .
IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1989, 24 (02) :185-197
[10]   OBSERVATION OF NONLINEAR RELAXATIONAL POLARIZATION EFFECTS AT HIGH ELECTRIC-FIELD STRENGTHS [J].
KLIEM, H ;
ARLT, G .
SOLID STATE COMMUNICATIONS, 1986, 59 (12) :793-795