Intra-cavity patterning for mode control in 1.3μm coupled VCSEL arrays

被引：10

作者：

Mutter, Lukas ^{[1
]}

Dwir, Benjamin ^{[1
]}

Caliman, Andrei ^{[1
]}

Iakovlev, Vladimir ^{[1
]}

Mereuta, Alexandru ^{[1
]}

Sirbu, Alexei ^{[1
]}

Kapon, Eli ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne EPFL, Lab Phys Nanostruct, CH-1015 Lausanne, Switzerland

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 06期

基金：

瑞士国家科学基金会;

关键词：

SURFACE-EMITTING LASERS; VERTICAL-CAVITY LASERS; WAFER-FUSED VCSELS; TUNNEL-JUNCTION; HIGH-POWER; WAVELENGTH; MODULATION; EMISSION; 10-GB/S; RELIEF;

D O I：

10.1364/OE.19.004827

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report coupled VCSEL arrays, emitting at 1.3 mu m wavelength, in which both the optical gain/loss and refractive index distributions were defined on different vertical layers. The arrays were electrically pumped through a patterned tunnel junction, whereas the array pixels were realized by intra-cavity patterning using sub-wavelength air gaps. Stable oscillations in coupled modes were evidenced for 2x2 array structures, from threshold current up to thermal roll-over, using spectrally resolved field pattern analysis. (C) 2011 Optical Society of America

引用

页码：4827 / 4832

页数：6

共 24 条

[1] TWIN-STRIPE INJECTION-LASER WITH LEAKY-MODE COUPLING [J].

ACKLEY, DE ;

ENGELMANN, RWH .

APPLIED PHYSICS LETTERS, 1980, 37 (10) :866-868

[2] Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction [J].

Arzberger, M ;

Lohner, M ;

Böhm, G ;

Amann, MC .

ELECTRONICS LETTERS, 2000, 36 (01) :87-88

[3] Single-mode emission from vertical-cavity surface-emitting lasers with low-index defects [J].

Bao, Ling ;

Kim, Nam-Heon ;

Mawst, Luke J. ;

Elkin, N. N. ;

Troshchieva, V. N. ;

Vysotsky, D. V. ;

Napartovich, A. P. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (2-4) :239-241

[4]

DEBERNARDI D, 2003, IEEE J SEL TOP QUANT, V19, P109

[5] High-power single-mode vertical-cavity surface-emitting lasers with triangular holey structure [J].

Furukawa, A ;

Sasaki, S ;

Hoshi, M ;

Matsuzono, A ;

Moritoh, K ;

Baba, T .

APPLIED PHYSICS LETTERS, 2004, 85 (22) :5161-5163

[6] Photon mode localization in disordered arrays of vertical cavity surface emitting lasers [J].

Golshani, A ;

Pier, H ;

Kapon, E ;

Moser, M .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (04) :2454-2456

[7] Single fundamental-mode output power exceeding 6 mW from VCSELs with a shallow surface relief [J].

Haglund, Å ;

Gustavsson, JS ;

Vukusic, J ;

Modh, P ;

Larsson, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (02) :368-370

[8]

Hofmann W., 2010, IEEE PHOTONICS J, V1, P1

[9] COUPLING MECHANISM OF GAIN-GUIDED INTEGRATED SEMICONDUCTOR-LASER ARRAYS [J].

KAPON, E ;

LINDSEY, C ;

KATZ, J ;

MARGALIT, S ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :389-391

[10] One- and two-dimensional coherently coupled implant-defined vertical-cavity laser Arrays [J].

Lehman, Ann C. ;

Choquette, Kent D. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (17-20) :1421-1423

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