Injection currents in narrow-gap (Pb1-xSnxTe):In insulators

被引：22

作者：

Akimov, AN ^{[1
]}

Erkov, VG ^{[1
]}

Klimov, AE ^{[1
]}

Molodtsova, EL ^{[1
]}

Suprun, SP ^{[1
]}

Shumsky, VN ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Div, Novosibirsk 630090, Russia

来源：

SEMICONDUCTORS | 2005年 / 39卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

Magnetic Material; Current Model; Electromagnetism; Injection Current; Energy Depth;

D O I：

10.1134/1.1923560

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The low-temperature current-voltage characteristics of narrow-gap (Pb1 - xSnxTe):In have been studied experimentally and calculated for a wide range of electric fields. It is shown that the obtained data are satisfactorily described in terms of a space-charge-limited current model in the presence of traps. The concentration and energy depth of the traps have been estimated. (c) 2005 Pleiades Publishing, Inc.

引用

页码：533 / 538

页数：6

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