Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

被引：63

作者：

Bernard, Y. ^{[1
,2
]}

Renard, V. T. ^{[1
]}

Gonon, P. ^{[2
]}

Jousseaume, V. ^{[1
]}

机构：

[1] CEA LETI, F-38054 Grenoble 9, France

[2] LTM CNRS, F-38054 Grenoble 9, France

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 05期

关键词：

Conductive Bridging Memory; CBRAM; Non-volatile; Solid electrolyte; Switching;

D O I：

10.1016/j.mee.2010.06.041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conductive Bridging RAM (CBRAM) is a promising candidate for future non-volatile memories. This technology is based on the change of the cell's resistive state, due to formation and dissolution of a metallic filament through an insulating layer. In this work we study Cu/SiO2 cells fabricated using standard back-end-of-line (BEOL) processes, making them low-cost and easy to integrate. We show evidence of reproducible electrical switching, without the need of an annealing post-treatment. Furthermore, the kinetic behaviour of the switching mechanism was studied using electrical experiments. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：814 / 816

页数：3

共 10 条

[1] Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch [J].

Banno, Naoki ;

Sakamoto, Toshitsugu ;

Iguchi, Noriyuki ;

Sunamura, Hiroshi ;

Terabe, Kazuya ;

Hasegawa, Tsuyoshi ;

Aono, Masakazu .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) :3283-3287

[2]

Kozicki M. N., 2005, P 2005 NONVOLATILE M, P1

[3] Non-volatile memory based on solid electrolytes [J].

Kozicki, MN ;

Gopalan, C ;

Balakrishnan, M ;

Park, M ;

Mitkova, M .

2004 NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM, PROCEEDINGS, 2004, :10-17

[4] Resistance switching of copper doped MoOx films for nonvolatile memory applications [J].

Lee, Dongsoo ;

Seong, Dong-jun ;

Jo, Inhwa ;

Xiang, F. ;

Dong, R. ;

Oh, Seokjoon ;

Hwang, Hyunsang .

APPLIED PHYSICS LETTERS, 2007, 90 (12)

[5] Low current resistive switching in Cu-SiO2 cells [J].

Schindler, C. ;

Weides, M. ;

Kozicki, M. N. ;

Waser, R. .

APPLIED PHYSICS LETTERS, 2008, 92 (12)

[6] Electrode kinetics of Cu-SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories [J].

Schindler, C. ;

Staikov, G. ;

Waser, R. .

APPLIED PHYSICS LETTERS, 2009, 94 (07)

[7] Bipolar and unipolar resistive switching in Cu-doped SiO2 [J].

Schindler, Christina ;

Thermadam, Sarath Chandran Puthen ;

Waser, Rainer ;

Kozicki, Michael N. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (10) :2762-2768

[8] Off-state and turn-on characteristics of solid electrolyte switch [J].

Tsuji, Y. ;

Sakamoto, T. ;

Banno, N. ;

Hada, H. ;

Aono, M. .

APPLIED PHYSICS LETTERS, 2010, 96 (02)

[9] Nanoionics-based resistive switching memories [J].

Waser, RaineR ;

Aono, Masakazu .

NATURE MATERIALS, 2007, 6 (11) :833-840

[10] Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application [J].

Yang, Yu Chao ;

Pan, Feng ;

Liu, Qi ;

Liu, Ming ;

Zeng, Fei .

NANO LETTERS, 2009, 9 (04) :1636-1643

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