Epitaxial growth of Sc2O3 films on GaN (0001) by pulsed laser deposition

被引：13

作者：

Liu, Chang ^{[1
]}

Chor, Eng Fong

Tan, Leng Seow

Du, Anyan

机构：

[1] Natl Univ Singapore, Ctr Optoelect, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Inst Microelect, Singapore 117685, Singapore

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2007年 / 25卷 / 03期

关键词：

D O I：

10.1116/1.2731332

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have demonstrated the epitaxial growth of Sc2O3 films on GaN (0001) using pulsed laser deposition (PLD) (with KrF excirner laser). The ' characteristics of these Sc2O3 films Were found to be highly dependent on. the substrate temperature (T-s) and the oxygen partial pressure (P) during the PLD process. Under optimized deposition conditions (T-s of 700 degrees C and, P-0 of 10 mTorr), highly c-axis oriented Sc2O3 films have been epitaxially grown on GaN (0001) ternpldte with fine film crystallinity, smooth surface morphology, good film stoichiometry, and a refractive index close to that of the bulk material. Cross-sectional transmission electron microscopy measurements confirmed the heteroepitaxial nature of the Sc2O3 films on the GaN template and revealed an epitaxial relationship of [112]Sc2O3 parallel to [21 (3) over bar0](GaN) and (222)(Sc2O3)parallel to(0002)(GaN). (c) 2007 American Vacuum Society.

引用

页码：754 / 759

页数：6

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