Highly enhanced thermoelectric figure of merit of a β-SiC nanowire with a nanoelectromechanical measurement approach

被引：24

作者：

Lee, Kyung-Min ^{[2
]}

Lee, Sang-Kwon ^{[3
]}

Choi, Tae-Youl ^{[1
]}

机构：

[1] Univ N Texas, Dept Mech & Energy Engn, Denton, TX 76203 USA

[2] Univ N Texas, Dept Phys, Denton, TX 76203 USA

[3] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Chonju 561756, South Korea

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2012年 / 106卷 / 04期

关键词：

LATTICE THERMAL-CONDUCTIVITY; TRANSPORT-PROPERTIES; PHONON CONFINEMENT; CARBON NANOTUBES; 3-OMEGA METHOD; HEAT;

D O I：

10.1007/s00339-011-6718-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We developed a reliable and highly reproducible way of fabricating a one-stop measurement platform for characterizing the thermoelectric properties of individual nanowires (NWs) using a focused ion beam and a nanomanipulator. 3-omega and 1-omega signals obtained by the four-point-probe method were used in measuring the thermal and electrical conductivities of the NW. Subsequently, the Seebeck coefficient was measured by using additional nanoelectrodes including a nanoheater. The thermal conductivity of the single beta-SiC NW was obtained at 86.5 +/- 3.5 W/mK. The Seebeck coefficient was obtained to be -1.21 mV/K by using the same measurement platform. Thus, the dimensionless figure of merit, ZT = sigma(ST)-T-2/k, was measured to be similar to 0.12. This value is around 120 times higher than the reported maximum value of bulk beta-SiC.

引用

页码：955 / 960

页数：6

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