Ammonia-free chemical bath deposition of nanocrystalline ZnS thin film buffer layer for solar cells

被引:214
|
作者
Goudarzi, Alireza [1 ]
Aval, Ghaffar Motedayen [1 ]
Sahraei, Reza [1 ]
Ahmadpoor, Hiva [1 ]
机构
[1] Teacher Training Tarbiat Moallem Univ, Dept Chem, Tehran, Iran
关键词
ZnS; thin films; chemical bath deposition; ammonia-free CBD; buffer layer; solar cells; semiconductor;
D O I
10.1016/j.tsf.2007.09.051
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, we prepared zinc sulfide thin films on glass substrates by ammonia-free chemical bath deposition method using thioacetamide as the sulfide source and Ethylene Diamine Tetra Acetic Acid disodium salt as the complexing agent in a solution of pH=6.0. Thin films of ZnS with different thicknesses of 18-450 nm were prepared. The effect of film thickness and annealing temperature in atmospheric air, on optical properties, band gap energy and grain size of nanocrystals were studied. The X-ray diffraction analysis showed a cubic zinc blend structure and a diameter of about 2-5 nm for ZnS nanocrystals. The Fourier Transform Infrared spectrum of films revealed no peaks due to impurities. The as-deposited ZnS films had more than 70% transmittance in the visible region. The direct band gap of as-deposited films ranged from 3.68 to 3.78 eV and those of annealed films varied from 3.60 to 3.70 eV (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:4953 / 4957
页数:5
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