Transconductance enhancement in deep submicron strained-Si n-MOSFETs

被引：108

作者：

Rim, K ^{[1
]}

Hoyt, JL ^{[1
]}

Gibbons, JF ^{[1
]}

机构：

[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746455

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first measurements on deep submicron strained-Si n-MOSFETs. In spite of the high channel doping and vertical effective fields, electron mobility is enhanced by similar to 75% compared to typical MOSFET mobilities. The extrinsic transconductance is increased by similar to 45% for channel lengths of 0.1 mu m, when AC measurements are used to reduce self-heating effects. The improved transconductance demonstrates the use of strain-induced enhancements in both mobility and high-field transport to increase the average electron velocity, while maintaining the channel doping required to suppress short channel effects.

引用

页码：707 / 710

页数：4

共 13 条

[1]

*AV CORP TMA INC, 1998, TMA MEDICI VERS 4 1

[2] RELATIONSHIP BETWEEN MEASURED AND INTRINSIC TRANSCONDUCTANCES OF FETS [J].

CHOU, SY ;

ANTONIADIS, DA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :448-450

[3] THERMAL + ELECTRICAL PROPERTIES OF HEAVILY DOPED GE-SI ALLOYS UP TO 1300 DEGREES K [J].

DISMUKES, JP ;

EKSTROM, E ;

BEERS, DS ;

STEIGMEIER, EF ;

KUDMAN, I .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) :2899-&

[4] A STUDY OF DEEP-SUBMICRON MOSFET SCALING BASED ON EXPERIMENT AND SIMULATION [J].

HU, H ;

JACOBS, JB ;

SU, LT ;

ANTONIADIS, DA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (04) :669-677

[5]

Kuo P, 1995, MATER RES SOC SYMP P, V379, P373, DOI 10.1557/PROC-379-373

[6] Ultra-shallow undoped 2DEGs in GaAs-AlGaAs heterostructures [J].

Das Gupta, K. ;

Mak, W. Y. ;

Sfigakis, F. ;

Beere, H. E. ;

Farrer, I. ;

Ritchie, D. A. .

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399

[7] Deep submicron CMOS based on silicon germanium technology [J].

ONeill, AG ;

Antoniadis, DA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (06) :911-918

[8] ON THE UNIVERSALITY OF INVERSION LAYER MOBILITY IN SI MOSFETS .1. EFFECTS OF SUBSTRATE IMPURITY CONCENTRATION [J].

TAKAGI, S ;

TORIUMI, A ;

IWASE, M ;

TANGO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) :2357-2362

[9] Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors [J].

Takagi, SI ;

Hoyt, JL ;

Welser, JJ ;

Gibbons, JF .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) :1567-1577

[10] AN AC CONDUCTANCE TECHNIQUE FOR MEASURING SELF-HEATING IN SOI MOSFETS [J].

TU, RH ;

WANN, C ;

KING, JC ;

KO, PK ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1995, 16 (02) :67-69

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