Transconductance enhancement in deep submicron strained-Si n-MOSFETs

被引：108

作者：

Rim, K ^{[1
]}

Hoyt, JL ^{[1
]}

Gibbons, JF ^{[1
]}

机构：

[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746455

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first measurements on deep submicron strained-Si n-MOSFETs. In spite of the high channel doping and vertical effective fields, electron mobility is enhanced by similar to 75% compared to typical MOSFET mobilities. The extrinsic transconductance is increased by similar to 45% for channel lengths of 0.1 mu m, when AC measurements are used to reduce self-heating effects. The improved transconductance demonstrates the use of strain-induced enhancements in both mobility and high-field transport to increase the average electron velocity, while maintaining the channel doping required to suppress short channel effects.

引用

页码：707 / 710

页数：4

共 13 条

[1] *AV CORP TMA INC, 1998, TMA MEDICI VERS 4 1
[2] RELATIONSHIP BETWEEN MEASURED AND INTRINSIC TRANSCONDUCTANCES OF FETS
CHOU, SY
ANTONIADIS, DA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 448 - 450
[3] THERMAL + ELECTRICAL PROPERTIES OF HEAVILY DOPED GE-SI ALLOYS UP TO 1300 DEGREES K
DISMUKES, JP
EKSTROM, E
BEERS, DS
STEIGMEIER, EF
KUDMAN, I
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2899 - &
[4] A STUDY OF DEEP-SUBMICRON MOSFET SCALING BASED ON EXPERIMENT AND SIMULATION
HU, H
JACOBS, JB
SU, LT
ANTONIADIS, DA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (04) : 669 - 677
[5] Kuo P, 1995, MATER RES SOC SYMP P, V379, P373, DOI 10.1557/PROC-379-373
[6] Ultra-shallow undoped 2DEGs in GaAs-AlGaAs heterostructures
Das Gupta, K.
Mak, W. Y.
Sfigakis, F.
Beere, H. E.
Farrer, I.
Ritchie, D. A.
[J]. PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
[7] Deep submicron CMOS based on silicon germanium technology
ONeill, AG
Antoniadis, DA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (06) : 911 - 918
[8] ON THE UNIVERSALITY OF INVERSION LAYER MOBILITY IN SI MOSFETS .1. EFFECTS OF SUBSTRATE IMPURITY CONCENTRATION
TAKAGI, S
TORIUMI, A
IWASE, M
TANGO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) : 2357 - 2362
[9] Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors
Takagi, SI
Hoyt, JL
Welser, JJ
Gibbons, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) : 1567 - 1577
[10] AN AC CONDUCTANCE TECHNIQUE FOR MEASURING SELF-HEATING IN SOI MOSFETS
TU, RH
WANN, C
KING, JC
KO, PK
HU, CM
[J]. IEEE ELECTRON DEVICE LETTERS, 1995, 16 (02) : 67 - 69

← 1 2 →