Enhanced photo luminescence from porous silicon on texturized surface

被引：3
作者：
Bandopadhyay, S
Datta, SK
Saha, H
Mukherjee, MK
机构：
[1] JADAVPUR UNIV,DEPT ELECT & TELECOMMUN ENGN,CALCUTTA 700032,W BENGAL,INDIA
[2] DURGAPUR WOMENS COLL,DEPT PHYS,DURGAPUR 713209,INDIA
[3] CITY COLL,DEPT PHYS,CALCUTTA 700009,W BENGAL,INDIA
来源：
BULLETIN OF MATERIALS SCIENCE | 1996年 / 19卷 / 05期
关键词：
silicon; porous silicon; photoluminescence;
D O I：
10.1007/BF02745192
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Porous silicon (PS) was formed on both polished and texturized single crystal silicon (100) by anodic etching. Photoluminescences (PL) from both of these silicon surfaces were measured and compared. A two-fold enhancement of PL from textured silicon surface was obtained. This enhancement could be ascribed to the geometry of the textured surface.
引用
收藏
页码：725 / 729
页数：5
相关论文
共 12 条
[1]   LASER-DYE IMPREGNATION OF OXIDIZED POROUS SILICON ON SILICON-WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1993, 63 (03) :337-339
[2]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[3]   VISIBLE-LIGHT EMISSION FROM HEAVILY DOPED POROUS SILICON HOMOJUNCTION PN DIODES [J].
CHEN, ZL ;
BOSMAN, G ;
OCHOA, R .
APPLIED PHYSICS LETTERS, 1993, 62 (07) :708-710
[4]   SOME NEW RESULTS IN POROUS SILICON [J].
JAIN, VK ;
GUPTA, A ;
JALWANIA, CR ;
KUMAR, A ;
SINGHAL, GK ;
ARORA, OP ;
AHUJA, DS ;
PURI, PP ;
SINGH, R ;
PAL, M .
BULLETIN OF MATERIALS SCIENCE, 1994, 17 (05) :551-561
[5]   EVIDENCE THAT BLUE LUMINESCENCE OF OXIDIZED POROUS SILICON ORIGINATES FROM SIO2 [J].
KONTKIEWICZ, AJ ;
KONTKIEWICZ, AM ;
SIEJKA, J ;
SEN, S ;
NOWAK, G ;
HOFF, AM ;
SAKTHIVEL, P ;
AHMED, K ;
MUKHERJEE, P ;
WITANACHCHI, S ;
LAGOWSKI, J .
APPLIED PHYSICS LETTERS, 1994, 65 (11) :1436-1438
[6]   INVESTIGATION OF RAPID-THERMAL-OXIDIZED POROUS SILICON [J].
LI, KH ;
TSAI, C ;
CAMPBELL, JC ;
HANCE, BK ;
WHITE, JM .
APPLIED PHYSICS LETTERS, 1993, 62 (26) :3501-3503
[7]   QUANTUM-SIZE EFFECT FROM PHOTOLUMINESCENCE OF LOW-TEMPERATURE-OXIDIZED POROUS-SI [J].
NAKAJIMA, A ;
NARA, Y ;
SUGITA, Y ;
ITAKURA, T ;
NAKAYAMA, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B) :415-418
[8]  
NOBUAKI N, 1993, APPL PHYS LETT, V62, P1429
[9]   NANOCRYSTAL SIZE MODIFICATIONS IN POROUS SILICON BY PREANODIZATION ION-IMPLANTATION [J].
PAVESI, L ;
GIEBEL, G ;
ZIGLIO, F ;
MARIOTTO, G ;
PRIOLO, F ;
CAMPISANO, SU ;
SPINELLA, C .
APPLIED PHYSICS LETTERS, 1994, 65 (17) :2182-2184
[10]   MICROSTRUCTURE OF POROUS SILICON AND ITS CORRELATION WITH PHOTOLUMINESCENCE [J].
TAKASUKA, E ;
KAMEI, K .
APPLIED PHYSICS LETTERS, 1994, 65 (04) :484-486
12