The role of oxidant in HF-based solution for noble metal removal from substrate

被引：2

作者：

Choi, GM ^{[1
]}

Yokoi, I

Ohmi, T

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Elect Engn, Sendai, Miyagi 980, Japan

[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan

来源：

ULTRA CLEAN PROCESSING OF SILICON SURFACES 2000 | 2001年 / 76-77卷

关键词：

FOM (HF/O-3); FPM (HF/H2O2); metallic impurity; removal efficiency;

D O I：

10.4028/www.scientific.net/SSP.76-77.267

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study was carried on to investigate and understand the role of oxidant in HF-based solution for removing copper contaminants on crystalline silicon surface. Its removal efficiency in solution is strongly dependent on the amount of oxidants as well as on the oxidation-reduction potential and pH value of solution.

引用

页码：267 / 270

页数：4