A sub-1V fourth-order bandpass delta-sigma modulator

被引：0
|
作者：
Chang, HH [1 ]
Kuo, CH
Liu, MH
Liu, SI
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan
来源：
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2003年 / 37卷 / 03期
关键词：
low-voltage; switched-capacitor; bandpass delta-sigma modulator; two-path structure;
D O I：
10.1023/A:1026265624740
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A sub-1V fourth-order bandpass delta-sigma modulator is presented in this paper. Using the switched opamp technique enables the modulator to operate at only 0.8 V supply voltage without using voltage multipliers or bootstrapping switches. A two-path structure is applied to relax the settling requirement. Implemented in a 0.25-mum one-poly, five-metal standard CMOS process, the prototype modulator exhibits a signal-to-noise-plus-distortion ratio (SNDR) of 58.2 db and a dynamic range (DR) of 64 db in a 60 KHz signal bandwidth centered at 1.25 MHz while consuming 2.5 mW and occupying an active area of 2.11 mm(2).
引用
收藏
页码：179 / 189
页数：11
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