A study on the correlation between electrochemical corrosion and chemical mechanical polishing performance of W and Ti film

被引：10
|
作者：
Seo, Yong-Jin [1 ]
机构：
[1] Daebul Univ, Dept Elect Engn, Youngam Kum 526702, Chonnam Do, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 12期
关键词：
chemical mechanical polishing; polishing selectivity; potentiodynamic polarization; electrochemical corrosion; removal rate; END-POINT DETECTION; CMP PROCESS; SELECTIVITY; TUNGSTEN; PLANARIZATION; ALUMINUM; BEHAVIOR;
D O I：
10.1016/j.mee.2006.09.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, in order to investigate the electrochemical polishing behavior of the tungsten (W) and titanium (Ti) film, the chemical mechanical polishing (CMP) performances of W and Ti film according to the oxidizer contents were studied through electrochemical corrosion analysis. The alumina (Al2O3)-based tungsten slurry with H2O2 oxidizer was used for CMP test. As an experimental result, for the case of 5 vol% oxidizer added, the removal rates were improved and a good polishing selectivity of 1.4: 1 was obtained. It means that the oxidizer with the highest removal rate (RR) has a high dissolution rate due to the predominant electrochemical corrosion effects. Therefore we conclude that the W and Ti-CMP characteristics are strongly dependent on the amounts of H2O2 oxidizer additive. 2006 Elsevier B.V.. All rights reserved.
引用
收藏
页码：2769 / 2774
页数：6
相关论文
共 50 条
  • [41] Optimizing polysilicon thin-film transistor performance with chemical-mechanical polishing and hydrogenation
    Chan, ABY
    Nguyen, CT
    Ko, PK
    Wong, M
    Kumar, A
    Sin, J
    Wong, SS
    IEEE ELECTRON DEVICE LETTERS, 1996, 17 (11) : 518 - 520
  • [42] Correlation Between Properties of Passive Film and Stress Corrosion Cracking of α-Ti in Methanol Solution
    Qin, Zhi
    Pang, Xiaolu
    Qiao, Lijie
    INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE, 2014, 9 (08): : 4352 - 4360
  • [43] Chemical-assisted mechanical polishing of diamond film on wafer
    Hocheng, H
    Chen, CC
    PROGRESS ON ADVANCED MANUFACTURE FOR MICRO/NANO TECHNOLOGY 2005, PT 1 AND 2, 2006, 505-507 : 1225 - 1230
  • [44] Mechanical properties and relationship to process performance of the polishing pad in chemical mechanical polishing (CMP) of silicon
    Moon, Y
    Park, I
    Dornfeld, DA
    PROCEEDINGS OF: SILICON MACHINING: 1998 SPRING TOPICAL MEETING, 1998, : 83 - 87
  • [45] Study on Pad Performance Deterioration in Chemical Mechanical Polishing (CMP) of Fused Silica
    Zhou, Yan
    Luo, Haimei
    Pan, Guoshun
    Zou, Chunli
    Luo, Guihai
    Chen, Gaopan
    Kang, Chengxi
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (06) : P295 - P298
  • [46] CORRELATION BETWEEN ENVIRONMENTAL AND ELECTROCHEMICAL CORROSION OF THIN-FILM MAGNETIC RECORDING MEDIA
    NOVOTNY, V
    STAUD, N
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (12) : 2931 - 2938
  • [47] Study of Pyrazole as Copper Corrosion Inhibitor in Alkaline Post Chemical Mechanical Polishing Cleaning Solution
    Goswami, Arindom
    Koskey, Simon
    Mukherjee, Tamal
    Chyan, Oliver
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (10) : P293 - P297
  • [48] Effect of abrasive particles on chemical mechanical polishing performance
    Tamboli, D
    Banerjee, G
    Chang, S
    Waddell, M
    Butcher, I
    Arefeen, Q
    Hymes, S
    THIN FILM MATERIALS, PROCESSES, AND RELIABILITY: PLASMA PROCESSING FOR THE 100 NM NODE AND COPPER INTERCONNECTS WITH LOW-K INTER-LEVEL DIELECTRIC FILMS, 2003, 2003 (13): : 291 - 303
  • [49] Study on Oxidant in Chemical Mechanical Polishing of Copper
    Xu Rui
    Wang Yongsheng
    Wang Yipu
    Liu Haixu
    Su Jianxiu
    Transactions on Electrical and Electronic Materials, 2020, 21 : 580 - 586
  • [50] A New Approach for the study of chemical mechanical polishing
    Devecchio, D
    Schmutz, P
    Frankel, GS
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2000, 3 (02) : 90 - 92
12345