A study on the correlation between electrochemical corrosion and chemical mechanical polishing performance of W and Ti film

被引：11
作者：
Seo, Yong-Jin [1 ]
机构：
[1] Daebul Univ, Dept Elect Engn, Youngam Kum 526702, Chonnam Do, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 12期
关键词：
chemical mechanical polishing; polishing selectivity; potentiodynamic polarization; electrochemical corrosion; removal rate; END-POINT DETECTION; CMP PROCESS; SELECTIVITY; TUNGSTEN; PLANARIZATION; ALUMINUM; BEHAVIOR;
D O I：
10.1016/j.mee.2006.09.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, in order to investigate the electrochemical polishing behavior of the tungsten (W) and titanium (Ti) film, the chemical mechanical polishing (CMP) performances of W and Ti film according to the oxidizer contents were studied through electrochemical corrosion analysis. The alumina (Al2O3)-based tungsten slurry with H2O2 oxidizer was used for CMP test. As an experimental result, for the case of 5 vol% oxidizer added, the removal rates were improved and a good polishing selectivity of 1.4: 1 was obtained. It means that the oxidizer with the highest removal rate (RR) has a high dissolution rate due to the predominant electrochemical corrosion effects. Therefore we conclude that the W and Ti-CMP characteristics are strongly dependent on the amounts of H2O2 oxidizer additive. 2006 Elsevier B.V.. All rights reserved.
引用
收藏
页码：2769 / 2774
页数：6
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