Low-power ternary content-addressable memory design based on a voltage self-controlled fin field-effect transistor segment

被引:3
作者
Chang, Yen-Jen [1 ]
Tsai, Kun-Lin [2 ]
Cheng, Yu-Cheng [1 ]
Lu, Meng-Rong [3 ]
机构
[1] Natl Chung Hsing Univ, Dept Comp Sci & Engn, Taichung, Taiwan
[2] Tunghai Univ, Dept Elect Engn, Taichung, Taiwan
[3] Neousys Technol Co, New Taipei, Taiwan
关键词
Ternary content-addressable memory (TCAM); Leakage power; Dynamic voltage control; Fin field-effect transistor (FinFET); Low power; TCAM;
D O I
10.1016/j.compeleceng.2019.106528
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Ternary content-addressable memory (TCAM) is a popular component to use for fast and parallel data searching. However, with technology downscaling, TCAM consumes huge leakage power, which affects search performance. To control TCAM's leakage power consumption, this paper proposes a multiple-segment voltage self-controlled TCAM (VoSCT) that varies the back-gate voltages of fin field-effect transistors and the supply voltages of a TCAM entry. In the VoSCT, a TCAM entry is partitioned into several segments, and each segment operates in one of the three following modes: high-speed mode, low-power mode, and ultra-low-power mode. Examples that use a real routing table are employed to verify the feasibility of the proposed VoSCT, and the experimental results indicate that 38% of leakage power and 21% of total power can be reduced with only a 9% search delay increase and 4% area overhead increase compared with the traditional TCAM design. (C) 2019 Elsevier Ltd. All rights reserved.
引用
收藏
页数:11
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