Charge collection efficiency of an irradiated cryogenic double-p silicon detector

被引：9

作者：

Borer, K

Janos, S

Li, Z

Dezillie, B

Da Viá, C

Granata, V

Casagrande, L ^{[1
]}

de Boer, RWI

Lourenço, C

Niinikoski, TO

Palmieri, VG

Chapuy, S

Dimcovski, Z

Grigoriev, E

Bell, W

Devine, SRH

Ruggiero, G

O'Shea, V

Smith, K

Berglund, P

de Boer, W

Hauler, F

Heising, S

Jungermann, L

Abreu, M

Rato, P

Sousa, P

Cindro, V

Mikuz, M

Zavrtanik, M

Esposito, A

Paul, S

Buontempo, S

D'Ambrosio, N

Pagano, S

Eremin, V

Verbitskaya, E

机构：

[1] CERN, Div EP, CH-1211 Geneva 23, Switzerland

[2] Univ Bern, Lab Hochenergiephys, CH-3012 Bern, Switzerland

[3] Brookhaven Natl Lab, Upton, NY 11973 USA

[4] Brunel Univ, Uxbridge UB8 3PH, Middx, England

[5] Univ Geneva, Dept Radiol, CH-1211 Geneva, Switzerland

[6] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

[7] Helsinki Univ Technol, Low Temp Lab, FI-02150 Espoo, Finland

[8] Univ Karlsruhe, IEKP, D-76128 Karlsruhe, Germany

[9] LIP, P-1000 Lisbon, Portugal

[10] Jozef Stefan Inst, Exp Particle Phys Dept, Ljubljana 1001, Slovenia

[11] Tech Univ Munich, Dept Phys E18, D-85748 Garching, Germany

[12] Univ Frederico II Napoli, Dipartimento Fis, Naples, Italy

[13] Ist Nazl Fis Nucl, I-80125 Naples, Italy

[14] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 462卷 / 03期

关键词：

cryogenic silicon detectors; Lazarus effect;

D O I：

10.1016/S0168-9002(01)00198-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We present results on the measurement of the charge collection efficiency of a p(+) /n/p(+) silicon detector irradiated to 1 x 10(15) n/cm(2), Operated in the temperature range between 80 and 200 K. For comparison, measurements obtained with a standard silicon diode (p(+) /n/n(+)), irradiated to the same fluence, are also presented. Both detectors show a dramatic increase of the CCE when operated at temperatures around 130 K. The double-p detector shows a higher CCE regardless of the applied bias and temperature, besides being symmetric with respect to the polarity of the bias voltage.

引用

页码：474 / 483

页数：10

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