Quantum-well and localized state emissions in AlInGaN deep ultraviolet light-emitting diodes

被引：6
作者：
Zhang, J. C.
Zhu, Y. H.
Egawa, T.
Sumiya, S.
Miyoshi, M.
Tanaka, M.
机构：
[1] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan
[2] NGK Insulators Ltd, Mizuho Ku, Nagoya, Aichi 4678530, Japan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 22期
关键词：
D O I：
10.1063/1.2817947
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Injection current and temperature dependence of electroluminescence (EL) is investigated in AlInGaN deep untraviolet light-emitting diodes. Two EL bands with different behaviors are observed. The high-energy band (P1) shows a monotonous redshift and an amazing increase of intensity with increasing current, however, a "U"-shaped shift and a saturation of intensity at high current are measured for the low-energy band (P2). Accordingly, P1 and P2 are attributed to emissions from quantum-well and localized states, respectively, with P1 dominant at high current and high temperature and P2 the main emission mechanism under low temperature and low current. Modeled data based on the theory of random population for localized states in quantum wells taking into account self-heating effect agree well with the experimental results. (C) 2007 American Institute of Physics.
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