Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition

被引：12

作者：

Huang, Ruomeng ^{[1
]}

Ye, Sheng ^{[1
]}

Sun, Kai ^{[1
]}

Kiang, Kian S. ^{[2
]}

de Groot, C. H. ^{[1
]}

机构：

[1] Univ Southampton, Dept Elect & Comp Sci, Nanoelect & Nanotechnol Grp, Southampton SO17 1BJ, Hants, England

[2] Univ Southampton, Southampton Nanofabricat Ctr, Southampton SO17 1BJ, Hants, England

来源：

NANOSCALE RESEARCH LETTERS | 2017年 / 12卷

基金：

英国工程与自然科学研究理事会;

关键词：

Fermi level; ZnO; Atomic layer deposition; Kelvin probe force microscopy; THIN-FILMS; SPECTROSCOPIC ELLIPSOMETRY; OPTICAL-PROPERTIES; DOPED ZNO; BAND-GAP; HYDROGEN;

D O I：

10.1186/s11671-017-2308-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A novel supercycled atomic layer deposition (ALD) process which combines thermal ALD process with in situ O-2 plasma treatment is presented in this work to deposit ZnO thin films with highly tunable electrical properties. Both O-2 plasma time and the number of thermal ALD cycles in a supercycle can be adjusted to achieve fine tuning of film resistivity and carrier concentration up to six orders of magnitude without extrinsic doping. The concentration of hydrogen defects are believed to play a major role in adjusting the electrical properties of ZnO films. Kelvin probe force microscopy results evidently show the shift of Fermi level in different ZnO films and are well associated with the changing of carrier concentration. This reliable and robust technique reported here clearly points towards the capability of using this method to produce ZnO films with controlled properties in different applications.

引用

页数：9

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