Comprehensive Study on the Bias-Dependent Equivalent-Circuit Elements Affected by PECVD SiN Passivation in AlGaN/GaN HEMTs

被引：9

作者：

Liu, Zhi Hong ^{[1
,2
]}

Ng, Geok Ing ^{[1
,2
]}

Arulkumaran, Subramaniam ^{[2
]}

Maung, Ye Kyaw Thu ^{[2
]}

Teo, Khoon Leng ^{[2
]}

Foo, Siew Chuen ^{[2
]}

Sahmuganathan, Vicknesh ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Temasek Labs, Singapore 637553, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 02期

关键词：

Equivalent-circuit parameters (ECPs); GaN; high-electron mobility transistor (HEMT); passivation; SURFACE PASSIVATION; MODEL; PERFORMANCE; RESISTANCE;

D O I：

10.1109/TED.2010.2093144

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a comprehensive study on the effect of plasma-enhanced chemical-vapor-deposited SiN surface passivation on the bias-dependent small-signal equivalent-circuit elements is carried out for AlGaN/GaN high-electron mobility transistors on a high-resistivity silicon substrate. The directcurrent and small-signal performance of the device was found to be improved by surface passivation. The small-signal equivalent-circuit parameters at various gate and drain biases were extracted, and the physical mechanisms of their bias-dependent behaviors before and after passivation are discussed in detail.

引用

页码：473 / 479

页数：7

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