Effect of electron irradiation on optical and photoelectric properties of microcrystalline hydrogenated silicon

被引：1
作者：
Kazanskii, AG [1 ]
Forsh, PA [1 ]
Khabarova, KY [1 ]
Chukichev, MV [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Moscow 119899, Russia
来源：
SEMICONDUCTORS | 2003年 / 37卷 / 09期
关键词：
D O I：
10.1134/1.1610122
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of irradiation with 40 keV electrons on the spectral dependence of the absorption coefficient and on the conductivity and photoconductivity of muc-Si:H was studied. An increase in the absorption coefficient in the defect-related spectral range (hnu < 1.2 eV) and a decrease in photoconductivity of muc-Si:H films were observed after irradiation. The initial parameters were restored by annealing the films at 180degreesC for 1 h. It was assumed that the changes observed result from the formation of metastable defects of the dangling bond type at boundaries of microcrystalline columns in muc-Si:H films subjected to electron irradiation. An inverse proportional dependence of photoconductivity on the concentration of defects formed under electron irradiation of muc-Si:H films was obtained. (C) 2003 MAIK "Nauka / Interperiodica".
引用
收藏
页码：1076 / 1079
页数：4
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