Spin Noise Spectroscopy in N-GaAs: Spin Relaxation of Localized Electrons

被引：2
|
作者：
Ma, Jian [1 ,2 ]
Shi, Ping [1 ,2 ]
Qian, Xuan [1 ]
Shang, Ya-Xuan [1 ,2 ]
Ji, Yang [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, SKLSM, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2017年 / 34卷 / 07期
基金：
中国国家自然科学基金;
关键词：
SPINTRONICS;
D O I：
10.1088/0256-307X/34/7/077202
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Spin noise spectroscopy (SNS) of electrons in n-doped bulk GaAs is studied as functions of temperature and the probe-laser energy. Experimental results show that the SNS signal comes from localized electrons in the donor band. The spin relaxation time of electrons, which is retrieved from the SNS measurement, depends on the probe light energy and temperature, and it can be ascribed to the variation of electron localization degree.
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页数：4
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