p- and n-type Fe-doped SnO2 gas sensors fabricated by the mechanochemical processing technique

被引：138
作者：
Galatsis, K
Cukrov, L
Wlodarski, W
McCormick, P
Kalantar-zadeh, K
Comini, E
Sberveglieri, G
机构：
[1] RMIT Univ, Sch Elect & Comp Engn, Sensor Technol Lab, Melbourne, Vic 3001, Australia
[2] CRC Microtechnol, Melbourne, Vic 3001, Australia
[3] Univ Western Australia, Res Ctr Adv Mineral & Mat Proc, Nedlands, WA 6009, Australia
[4] Dept Chim Fis Ingn & Mat, Brescia, Italy
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2003年 / 93卷 / 1-3期
关键词：
gas sensors; tin oxide; mechanochemical;
D O I：
10.1016/S0925-4005(03)00233-8
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Fe-doped SnO2 sensors were fabricated using micromechanical synthesis technique. The Fe-doped sensor was compared to pure SnO2. Fe-doped SnO2 responded as a p-type semiconductor to oxygen concentrations of up to 10% at 300 degreesC. As the temperature increased to 400 degreesC, the material responded as an n-type semiconductor. Furthermore, a higher surface area and smaller grains size diameters were achieved when doping SnO2 with Fe. This translated into improved dynamic gas sensing properties and also improved responses to gases such as ethanol. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：562 / 565
页数：4
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