Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal

被引：88

作者：

Deng, Bing ^{[5
]}

Wang, Binbin ^{[4
]}

Li, Ning ^{[1
,2
]}

Li, Rongtan ^{[6
]}

Wang, Yani ^{[5
]}

Tang, Jilin ^{[5
]}

Fu, Qiang ^{[6
]}

Tian, Zhen ^{[4
]}

Gao, Peng ^{[1
,2
,3
]}

Xue, Jiamin ^{[4
]}

Peng, Hailin ^{[5
]}

机构：

[1] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China

[2] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China

[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

[4] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

[5] Peking Univ, Beijing Sci & Engn Ctr Nanocarbons, Beijing Natl Lab Mol Sci BNLMS, Ctr Nanochem CNC,Coll Chem & Mol Engn, Beijing 100871, Peoples R China

[6] Chinese Acad Sci, Dalian Inst Chem Phys, Collaborat Innovat Ctr Chem Energy Mat iChEM, State Key Lab Catalysis, Dalian 116023, Peoples R China

来源：

ACS NANO | 2020年 / 14卷 / 02期

基金：

中国国家自然科学基金;

关键词：

twisted bilayer graphene; quasicrystal; interlayer coupling; epitaxial growth; electronic structure; KINETICS; DOMAINS; GROWTH;

D O I：

10.1021/acsnano.9b07091

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Stacking order has a strong influence on the coupling between the two layers of twisted bilayer graphene (BLG), which in turn determines its physical properties. Here, we report the investigation of the interlayer coupling of the epitaxially grown single-crystal 30 degrees-twisted BLG on Cu(111) at the atomic scale. The stacking order and morphology of BLG is controlled by a rationally designed two-step growth process, that is, the thermodynamically controlled nucleation and kinetically controlled growth. The crystal structure of the 30 degrees-twisted bilayer graphene (30 degrees-tBLG) is determined to have quasicrystal-like symmetry. The electronic properties and interlayer coupling of the 30 degrees-tBLG are investigated using scanning tunneling microscopy and spectroscopy. The energy-dependent local density of states with in situ electrostatic doping shows that the electronic states in two graphene layers are decoupled near the Dirac point. A linear dispersion originated from the constituent graphene monolayers is discovered with doubled degeneracy. This study contributes to controlled growth of twist-angle-defined BLG and provides insights on the electronic properties and interlayer coupling in this intriguing system.

引用

页码：1656 / 1664

页数：9

共 49 条

[31] Scattering and interference in epitaxial graphene [J].

Rutter, G. M. ;

Crain, J. N. ;

Guisinger, N. P. ;

Li, T. ;

First, P. N. ;

Stroscio, J. A. .

SCIENCE, 2007, 317 (5835) :219-222

[32] Quantum Hall Effect, Screening, and Layer-Polarized Insulating States in Twisted Bilayer Graphene [J].

Sanchez-Yamagishi, Javier D. ;

Taychatanapat, Thiti ;

Watanabe, Kenji ;

Taniguchi, Takashi ;

Yacoby, Amir ;

Jarillo-Herrero, Pablo .

PHYSICAL REVIEW LETTERS, 2012, 108 (06)

[33] Emergent momentum scale, localization, and van Hove singularities in the graphene twist bilayer [J].

Shallcross, S. ;

Sharma, S. ;

Pankratov, O. .

PHYSICAL REVIEW B, 2013, 87 (24)

[34] Electronic structure of turbostratic graphene (vol 81, 165105, 2010) [J].

Shallcross, S. ;

Sharma, S. ;

Kandelaki, E. ;

Pankratov, O. A. .

PHYSICAL REVIEW B, 2010, 81 (23)

[35] Edge Structural Stability and Kinetics of Graphene Chemical Vapor Deposition Growth [J].

Shu, Haibo ;

Chen, Xiaoshuang ;

Tao, Xiaoming ;

Ding, Feng .

ACS NANO, 2012, 6 (04) :3243-3250

[36] First Direct Observation of a Nearly Ideal Graphene Band Structure [J].

Sprinkle, M. ;

Siegel, D. ;

Hu, Y. ;

Hicks, J. ;

Tejeda, A. ;

Taleb-Ibrahimi, A. ;

Le Fevre, P. ;

Bertran, F. ;

Vizzini, S. ;

Enriquez, H. ;

Chiang, S. ;

Soukiassian, P. ;

Berger, C. ;

de Heer, W. A. ;

Lanzara, A. ;

Conrad, E. H. .

PHYSICAL REVIEW LETTERS, 2009, 103 (22)

[37] Highly Uniform Bilayer Graphene on Epitaxial Cu-Ni(111) Alloy [J].

Takesaki, Yuichiro ;

Kawahara, Kenji ;

Hibino, Hiroki ;

Okada, Susumu ;

Tsuji, Masaharu ;

Ago, Hiroki .

CHEMISTRY OF MATERIALS, 2016, 28 (13) :4583-4592

[38] Seamless Stitching of Graphene Domains on Polished Copper (111) Foil [J].

Van Luan Nguyen ;

Shin, Bong Gyu ;

Dinh Loc Duong ;

Kim, Sung Tae ;

Perello, David ;

Lim, Young Jin ;

Yuan, Qing Hong ;

Ding, Feng ;

Jeong, Hu Young ;

Shin, Hyeon Suk ;

Lee, Seung Mi ;

Chae, Sang Hoon ;

Quoc An Vu ;

Lee, Seung Hee ;

Lee, Young Hee .

ADVANCED MATERIALS, 2015, 27 (08) :1376-+

[39] Evolutionary selection growth of two-dimensional materials on polycrystalline substrates [J].

Vlassiouk, Ivan V. ;

Stehle, Yijing ;

Pudasaini, Pushpa Raj ;

Unocic, Raymond R. ;

Rack, Philip D. ;

Baddorf, Arthur P. ;

Ivanov, Ilia N. ;

Lavrik, Nickolay V. ;

List, Frederick ;

Gupta, Nitant ;

Bets, Ksenia V. ;

Yakobson, Boris I. ;

Smirnov, Sergei N. .

NATURE MATERIALS, 2018, 17 (04) :318-+

[40]

Xue JM, 2011, NAT MATER, V10, P282, DOI [10.1038/nmat2968, 10.1038/NMAT2968]

← 1 2 3 4 5 →