Gallium nitride surface preparation optimised using in situ scanning tunnelling microscopy

被引：17

作者：

Oliver, RA ^{[1
]}

Nörenberg, C ^{[1
]}

Martin, MG ^{[1
]}

Crossley, A ^{[1
]}

Castell, MR ^{[1
]}

Briggs, GAD ^{[1
]}

机构：

[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

APPLIED SURFACE SCIENCE | 2003年 / 214卷 / 1-4期

基金：

英国工程与自然科学研究理事会;

关键词：

gallium nitride; scanning tunnelling microscopy; surface cleaning; surface morphology; X-ray photoelectron spectroscopy;

D O I：

10.1016/S0169-4332(03)00011-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Effective preparation of clean GaN surfaces is vital for surface studies, and also has a key role to play in the development of nitride-based electronic devices, due to the importance of forming good metal-semiconductor contacts. We identify the effect of two common surface cleaning treatments (annealing in ammonia, and.,sputtering in nitrogen followed by in vacuo annealing) on surface reconstruction, morphology and stoichiometry, by employing a combination of in situ RHEED and scanning tunnelling microscopy (STM), and ex situ X-ray photoelectron spectroscopy (XPS). We show how the defect densities in as-treated GaN surfaces may be reduced by growing thin layers of GaN by low-pressure MBE, a technique compatible with most experimental surface science systems. By using a combination of in situ etching and low-pressure growth, we show that it is possible to obtain very similar surface structures to those obtained by full-scale MBE. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：1 / 10

页数：10

共 36 条

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