Influence of gallium surface saturation on GaN nanowire polytype selection during molecular-beam epitaxy

被引：1
作者：
Lu, H. [1 ]
Moniri, S. [2 ]
Reese, C. [1 ]
Jeon, S. [1 ]
Katcher, A. [3 ]
Hill, T. [3 ]
Deng, H. [3 ]
Goldman, R. S. [1 ,3 ]
机构：
[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Chem Engn, Ann Arbor, MI 48109 USA
[3] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
来源：
APPLIED PHYSICS LETTERS | 2021年 / 119卷 / 03期
基金：
美国国家科学基金会;
关键词：
SPONTANEOUS POLARIZATION; BAND-GAP; SILICON; GROWTH; NUCLEATION; ZINCBLENDE;
D O I：
10.1063/5.0052659
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have examined the influence of Ga surface saturation on gallium nitride (GaN) nanowire (NW) polytype selection during molecular-beam epitaxy. The Ga surface saturation in the absence and presence of nitrogen determines the GaN polytype and morphology (i.e., films vs NW) selection, respectively. We discuss the interplay between surface and step-edge diffusion barriers governing the NW-to-film-transition and the influence of SixNy interlayer formation on zinc blende (ZB) vs wurtzite (WZ) polytype selection of GaN. In addition, distinct exciton emissions associated with ZB and WZ GaN are observed, suggesting a type-I WZ/ZB GaN band-offset. This work provides a crucial step toward the realization of polarization-free, CMOS-compatible GaN-based optoelectronics. Published under an exclusive license by AIP Publishing.
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页数：5
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