Radiation induced trap levels in SIMOX oxides: Low temperature Thermally Stimulated Luminescence

被引：13
作者：
Martini, M
Meinardi, F
Rosetta, E
Spinolo, G
Vedda, A
Leray, JL
Paillet, P
Autran, JL
Devine, RAB
机构：
[1] Univ Milan, INFM, Dipartimento Sci Mat, I-20126 Milan, Italy
[2] Ctr Etud Bruyeres Le Chatel, CEA, F-91680 Bruyeres Le Chatel, France
[3] Inst Natl Sci Appl, Phys Mat Lab, F-69621 Villeurbanne, France
[4] France Telecom, Ctr Natl Etud Telecommun, F-38243 Meylan, France
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 03期
关键词：
D O I：
10.1109/23.685213
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thermally Stimulated Luminescence (TSL) properties of SIMOX oxides, induced by x-irradiation, have been studied in the temperature range 100-400 K. For the first time studied in SIMOX, a series of TSL peaks at 110, 150 and 200 K appear clearly. A continuous distribution of trap levels ranging from 0.4 to 1.1 eV has been found to be responsible for the broad and intense peak observed at 200 K; moreover, the wavelength distribution of the emitted light has revealed the presence of an emission centred at 2.7 eV. A comparison with the TSL properties of synthetic silica is presented, and the results are discussed also in the light of previous characterizations of trap levels obtained by electrical techniques. This study gives new insight concerning the electron and hole traps structures in SIMOX compared to bulk silica.
引用
收藏
页码：1396 / 1401
页数：6
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