Diode-pumped passively Q-switched and mode-locked Nd:GGG laser at 1.3 μm with V3+:YAG saturable absorber

被引：28

作者：

Zuo, C. H. ^{[1
,2
]}

Zhang, B. T. ^{[2
]}

Liu, Y. B. ^{[1
]}

He, J. L. ^{[2
]}

Huang, H. T. ^{[2
]}

Yang, J. F. ^{[2
]}

Xu, J. L. ^{[2
]}

机构：

[1] Shandong Inst Light Ind, Inst Math & Phys, Jinan 250353, Peoples R China

[2] Shandong Univ, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

LASER PHYSICS | 2010年 / 20卷 / 08期

基金：

中国国家自然科学基金;

关键词：

ND-GGG; CONTINUOUS-WAVE; GARNET CRYSTAL; NDGDVO4; LASER; V-YAG; PERFORMANCE;

D O I：

10.1134/S1054660X1015020X

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Using V3+:YAG crystal as the saturable absorber, a diode-pumped passively Q-switched and mode-locked Nd:GGG laser operating at 1.3 mu m is realized for the first time. The mode-locking modulation depth of nearly 100% has been achieved. The maximum output power and the single Q-switched pulse energy are 410 mW and 8.3 mu J. The mode-locked pulse inside the Q-switched pulse has a repetition rate of 349 MHz, and its average pulse width is estimated to be about 750 ps.

引用

页码：1717 / 1720

页数：4

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