Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys

被引：20

作者：

Cheong, HM ^{[1
]}

Mascarenhas, A ^{[1
]}

Ahrenkiel, SP ^{[1
]}

Jones, KM ^{[1
]}

Geisz, JF ^{[1
]}

Olson, JM ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.367371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the results of low-temperature (4.2 K) microphotoluminescence (PL) measurements on cleaved edges of spontaneously ordered GaInP2 alloy samples with the results of cross-section transmission electron microscopy (TEM). The TEM dark-field images show that the size of ordered domains grows as the deposition progresses. The excitonic luminescence peak in the micro-FL spectra of GaInP2 is stronger near the surface of the thin film than near the substrate. From these results, we conclude that there is a direct correlation between the domain size or alternatively, the density of domain boundaries, and the relative strength of the excitonic peak. (C) 1998 American Institute of Physics.

引用

页码：5418 / 5420

页数：3

共 7 条

[1] SUBSTRATE-DRIVEN ORDERING MICROSTRUCTURE IN GAXIN1-XP ALLOYS [J].