Intersubband transitions in InGaAs/AlAs coupled double quantum well structures for multi-wavelength all-optical switching

被引：20

作者：

Yoshida, H ^{[1
]}

Mozume, T ^{[1
]}

Nishimura, T ^{[1
]}

Wada, O ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, FESTA Labs, Tsukuba, Ibaraki 30026, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 09期

关键词：

D O I：

10.1049/el:19980605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A coupled double quantum well (C-DQW) structure enabling ultrafast, multi-wavelength, all-optical modulation using intersubband transitions is, proposed. It has been shown from the calculation of absorption spectrum and relaxation characteristics that an InGaAs/AlAs C-DQW structure is desirable for application to all-optical switches for multi-wavelength operation at near-infrared wavelengths down to 1.5 mu m.

引用

页码：913 / 915

页数：3

共 5 条

[1] Near-infrared intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate [J].

Asano, T ;

Noda, S ;

Abe, T ;

Sasaki, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :1285-1291

[2]

RIDLEY BK, 1992, HOT CARRIERS SEMICON

[3] ELECTRON INTERSUBBAND TRANSITIONS TO 0.8 EV (1.55 MU-M) IN INGAAS ALAS SINGLE QUANTUM-WELLS [J].

SMET, JH ;

PENG, LH ;

HIRAYAMA, Y ;

FONSTAD, CG .

APPLIED PHYSICS LETTERS, 1994, 64 (08) :986-987

[4] Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs [J].

Sung, B ;

Chui, HC ;

Fejer, MM ;

Harris, JS .

ELECTRONICS LETTERS, 1997, 33 (09) :818-820

[5]

YOSHIDA H, 1995, CLEO PACIFIC RIM 95, P275

← 1 →