Thermal decomposition mechanisms of methylamine, ethylamine, and 1-propylamine on Si(100)-2 x 1 surface

被引:12
|
作者
Cho, Jieun [1 ]
Choi, Cheol Ho
机构
[1] Kyungpook Natl Univ, Dept Chem, Taegu 702701, South Korea
关键词
SCANNING-TUNNELING-MICROSCOPY; MM3; FORCE-FIELD; DISSOCIATIVE ADSORPTION; MOLECULAR-MECHANICS; NH3; ADSORPTION; CORE-LEVEL; N; 1S; CHEMISTRY; METHANOL; AMMONIA;
D O I
10.1063/1.3589362
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The thermal decomposition reactions of methylamine, ethylamine, and 1-propylamine absorbed on Si(100)-2 x 1 surface were theoretically investigated. Eight decomposition channels were found leading to desorption products of imine, H-2, alkyl cyanide, ammonia, aziridine, alkene, azetidine, and cyclopropane, which supports the experimental assignments. Our mechanistic studies strongly suggest that the alkyl cyanide (hydrogen cyanide in the case of methylamine) channel is coupled with the hydrogen desorption step. The beta-hydrogen of ethylamine and 1-propylamine was found to undergo additional decomposition reactions producing aziridine and alkene, which were classified as gamma- and beta-eliminations, respectively. It was also found that the gamma-hydrogen of 1-propylamine undergoes azetidine and cyclopropane producing decompositions, which were classified as delta- and gamma-eliminations. In general, gamma- and delta-hydrogen involved decomposition reactions are kinetically less favorable than beta-hydrogen involved ones. Consequently, it is expected that the thermal decompositions of the primary alkyl amines with longer alkyl chains would not add additional favorable decomposition channels. Except alkyl cyanide and ammonia desorption channels, the decompositions occur in a concerted fashion. (C) 2011 American Institute of Physics. [doi:10.1063/1.3589362]
引用
收藏
页数:8
相关论文
共 50 条
  • [41] STM investigation of the initial adsorption stage of Bi on Si(100)-(2 x 1) and Ge(100)-(2 x 1) surfaces
    Bulavenko, SY
    Koval, IF
    Melnik, PV
    Nakhodkin, NG
    Zandvliet, HJW
    SURFACE SCIENCE, 2001, 482 : 370 - 375
  • [42] Dissociative Adsorption of Dimethyl Sulfoxide at the Ge(100)-2 x 1 Surface
    Wong, Keith T.
    Chopra, Sonali N.
    Bent, Stacey F.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (50) : 26422 - 26430
  • [43] Morphology of Si(100)-2 x 1 surface with submonolayers of LiF studied by UHV-STM
    Guo, HS
    Kawanowa, H
    Souda, R
    APPLIED SURFACE SCIENCE, 2000, 158 (1-2) : 159 - 163
  • [44] Electronic structure of monolayer C-60 on Si(100)2x1 surface
    Yajima, A
    Tsukada, M
    SURFACE SCIENCE, 1996, 357 (1-3) : 355 - 360
  • [45] Role of surface defects in room-temperature growth of metals on Si(100)2 x 1
    Kocán, N
    Sobotík, P
    Ostádal, I
    CZECHOSLOVAK JOURNAL OF PHYSICS, 2006, 56 (01) : 27 - 32
  • [46] Possibility of direct exchange diffusion of hydrogen on the Cl/Si(100)-2X1 surface
    Hsieh, Ming-Feng
    Lin, Deng-Sung
    Tsay, Shiow-Fon
    PHYSICAL REVIEW B, 2009, 80 (04):
  • [47] Thermally Activated Reactions of Nitrobenzene at the Ge(100)-2 x 1 Surface
    Shong, Bonggeun
    Bent, Stacey F.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (50) : 29224 - 29233
  • [48] Adsorption sites of the products of GeH4 on asymmetric Si(100)(2 x 1) surface
    Katircioglu, S
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2004, 18 (08): : 1191 - 1202
  • [49] Coadsorption of Ethylene and Nitrobenzene on Si(100)-2 x 1: Toward Surface Patterning at the Molecular Level
    Madachik, Mark R.
    Teplyakov, Andrew V.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (42) : 18270 - 18275
  • [50] Ab initio investigation of the passivation effect of the acrylonitrile molecule on the Si(100)-(2 x 1) surface
    Usanmaz, D.
    Srivastava, G. P.
    CHEMICAL PHYSICS, 2014, 439 : 12 - 16