Photoemission performance of thin graded structure AlGaN photocathode

被引：20

作者：

Hao, Guanghui ^{[1
,2
]}

Shi, Feng ^{[2
]}

Cheng, Hongchang ^{[2
]}

Ren, Bin ^{[2
]}

Chang, Benkang ^{[1
]}

机构：

[1] Sci & Technol Low Light Level Night Vis Lab, Xian 710065, Shanxi, Peoples R China

[2] Nanjing Univ Sci & Technol, Inst Elect Engn & Optoelect Technol, Nanjing 210094, Jiangsu, Peoples R China

来源：

APPLIED OPTICS | 2015年 / 54卷 / 10期

关键词：

PHOTODETECTORS; DETECTORS; ALXGA1-XN; EPITAXY; FILMS;

D O I：

10.1364/AO.54.002572

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In order to research a high-efficiency AlGaN photocathode, the AlGaN photocathodes with varied Al composition (0.68 and 0.4) and uniform Al composition (0.24) were grown. The photocathodes were activated by Cs adsorption and received their spectral response via multi-information system. Results show that the absorption rate of the AlGaN photocathode with varied Al composition is half of the AlGaN photocathode with uniform Al composition, but the quantum efficiency of the photocathode with varied Al composition is approximately 29% higher than that of the photocathode with uniform Al composition. The built-in field within the emission layer of the AlGaN photocathode with varied Al composition is much higher than that of the photocathode with uniform Al composition, which is the main factor that promotes the photoelectron movement toward the photocathode surface and improves photoemission performance of the AlGaN photocathode. (C) 2015 Optical Society of America

引用

页码：2572 / 2576

页数：5

共 19 条

[1] Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold [J].

Ainbund, M. R. ;

Alekseev, A. N. ;

Alymov, O. V. ;

Jmerik, V. N. ;

Lapushkina, L. V. ;

Mizerov, A. M. ;

Ivanov, S. V. ;

Pashuk, A. V. ;

Petrov, S. I. .

TECHNICAL PHYSICS LETTERS, 2012, 38 (05) :439-442

[2] Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films [J].

Angerer, H ;

Brunner, D ;

Freudenberg, F ;

Ambacher, O ;

Stutzmann, M ;

Hopler, R ;

Metzger, T ;

Born, E ;

Dollinger, G ;

Bergmaier, A ;

Karsch, S ;

Korner, HJ .

APPLIED PHYSICS LETTERS, 1997, 71 (11) :1504-1506

[3]

[Anonymous], 2008, P SOC PHOTO-OPT INS

[4]

Glesener J.W., 2009, P SOC PHOTO-OPT INS, V7339

[5] Electron affinity of AlxGa1-xN(0001) surfaces [J].

Grabowski, SP ;

Schneider, M ;

Nienhaus, H ;

Mönch, W ;

Dimitrov, R ;

Ambacher, O ;

Stutzmann, M .

APPLIED PHYSICS LETTERS, 2001, 78 (17) :2503-2505

[6] Attenuation performance of reflection-mode AlGaN photocathode under different preparation methods [J].

Hao, Guanghui ;

Yang, Mingzhu ;

Chang, Benkang ;

Chen, Xinlong ;

Zhang, Junju ;

Fu, Xiaoqian .

APPLIED OPTICS, 2013, 52 (23) :5671-5675

[7] High quantum efficiency ultraviolet/blue AlGaN/InGaN photocathodes grown by molecular-beam epitaxy [J].

Leopold, DJ ;

Buckley, JH ;

Rebillot, P .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (04)

[8] Optical and electrical properties of Mg-doped p-type AlxGa1-xN [J].

Li, J ;

Oder, TN ;

Nakarmi, ML ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2002, 80 (07) :1210-1212

[9] High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN [J].

Parish, G ;

Keller, S ;

Kozodoy, P ;

Ibbetson, JP ;

Marchand, H ;

Fini, PT ;

Fleischer, SB ;

DenBaars, SP ;

Mishra, UK ;

Tarsa, EJ .

APPLIED PHYSICS LETTERS, 1999, 75 (02) :247-249

[10] High visible rejection AlGaN photodetectors on Si(111) substrates [J].

Pau, JL ;

Monroy, E ;

Naranjo, FB ;

Muñoz, E ;

Calle, F ;

Sánchez-García, MA ;

Calleja, E .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2785-2787

← 1 2 →