Performance Enhancement of Ultra-Thin Nanowire Array Solar Cells by Bottom Reflectivity Engineering

被引:10
作者
Yan, Xin [1 ]
Liu, Haoran [1 ]
Sibirev, Nickolay [2 ]
Zhang, Xia [1 ]
Ren, Xiaomin [1 ]
机构
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[2] ITMO Univ, St Petersburg 197101, Russia
基金
中国国家自然科学基金;
关键词
nanowire; solar cell; bottom reflectivity; conversion efficiency; PHOTOVOLTAIC PERFORMANCE; GAAS NANOWIRES; EFFICIENCY; PASSIVATION; SILICON; SI;
D O I
10.3390/nano10020184
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A bottom-reflectivity-enhanced ultra-thin nanowire array solar cell is proposed and studied by 3D optoelectronic simulations. By inserting a small-index MgF2 layer between the polymer and substrate, the absorption is significantly improved over a broad wavelength range due to the strong reabsorption of light reflected at the polymer/MgF2 interface. With a 5 nm-thick MgF2 layer, the GaAs nanowire array solar cell with a height of 0.4-1 mu m yields a remarkable conversion efficiency ranging from 14% to 15.6%, significantly higher than conventional structures with a much larger height. Moreover, by inserting the MgF2 layer between the substrate and a part of the nanowire, in addition to between the substrate and polymer, the absorption of substrate right below the nanowire is further suppressed, leading to an optimal efficiency of 15.9%, 18%, and 5.4% for 1 mu m-high GaAs, InP, and Si nanowire solar cells, respectively. This work provides a simple and universal way to achieve low-cost high-performance nanoscale solar cells.
引用
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页数:12
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