Microsystem optoelectronic integration for mixed multisignal systems

被引：19

作者：

Jokerst, NM ^{[1
]}

Brooke, MA ^{[1
]}

Laskar, J ^{[1
]}

Wills, DS ^{[1
]}

Brown, AS ^{[1
]}

Vrazel, M ^{[1
]}

Jung, S ^{[1
]}

Joo, Y ^{[1
]}

Chang, JJ ^{[1
]}

机构：

[1] Georgia Inst Technol, Yamacraw Initiat, Georgia Tech Broadband Inst, NSF,Elect Packaging Res Ctr,Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2000年 / 6卷 / 06期

基金：

美国国家科学基金会;

关键词：

CMOS; GaAs; MESFET; optoelectronic devices; VLSI;

D O I：

10.1109/2944.902172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The integration and packaging of optoelectronic devices with electronic circuits and systems has growing application in many fields, ranging from long to micro haul links. An exploration of the opportunities, integration technologies, and some recent results using thin-film device heterogeneous integration with Si CMOS VLSI and GaAs MESFET circuit technologies are presented in this paper. Applications explored herein include alignment tolerant optoelectronic links for network interconnections, smart pixel focal plane array processing through the integration of imaging arrays with sigma delta analog to digital converters underneath each pixel, and three dimensional computational systems using vertical through-Si optical interconnections.

引用

页码：1231 / 1239

页数：9

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