0.18 μm CMOS dual-band UWB LNA with interference rejection

被引：25

作者：

Gao, Y.

Zheng, Y. J.

Ooi, B. L.

机构：

[1] Inst Microelect, Singapore 117685, Singapore

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 20期

关键词：

D O I：

10.1049/el:20072054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CMOS dual-band ultra-wideband low noise amplifier (LNA) with interference rejection is presented. The proposed LNA employs a current reuse structure to reduce power consumption and an active notch filter to produce in-band rejection in the 5 GHz WLAN frequency band. The load tank of the current reuse stage is optimised to provide an additional out-band attenuation in the 2.4 GHz WLAN band. Measurement shows a peak gain of 19.7 dB in the low band (3-5 GHz) and 20.3 dB in the high band (6-10 GHz), while the in-band and out-band maximum rejections are 19.6 and 12.8 dB, respectively.

引用

页码：1096 / 1098

页数：3

共 6 条

[1] An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers [J].