1200 V SiC BJTs with low VCESAT and high temperature capability

被引：8

作者：

Domeij, M. ^{[1
]}

Lindgren, A. ^{[1
]}

Zaring, C. ^{[1
]}

Konstantinov, A. ^{[1
]}

Gumaelius, K. ^{[1
]}

Grenell, H. ^{[1
]}

Keri, I. ^{[1
]}

Svedberg, J-O ^{[1
]}

Reimark, M. ^{[1
]}

机构：

[1] TranSiC AB, S-16440 Kista, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷

关键词：

bipolar transistor; SPICE model; saturation voltage; switching;

D O I：

10.4028/www.scientific.net/MSF.679-680.686

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vertical epitaxial NPN SiC BJTs for 1200 V rating were fabricated. Very low collector-emitter saturation voltages V(CESAT)=0.5 V at I(C)=6 A (J(C)=140 A/cm(2)) and T=25 degrees C and V(CESAT)=1.0 V at I(C)=6 A and T=250 degrees C were measured. The common emitter current gain at I(C)=6 A is 71 at T=25 degrees C and 32 at T=25 degrees C, respectively. A SPICE model was developed for the BJT including the parasitic capacitances of the internal pn junctions, as well as temperature dependence of the current gain and the collector series resistance. The I(C)-V(CE) characteristics of the BJT are in good agreement with the SPICE model between 25 degrees C and 250 degrees C. Fast switching measurements were performed showing a V(CE) voltage fall-time of 22 ns and a V(CE) voltage rise-time of 11 ns.

引用

页码：686 / 689

页数：4

共 6 条

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