High Efficiency Injectorless Quantum Cascade Lasers Emitting at 8.8 μm With 2-W Peak Pulsed Power per Facet at Room Temperature

被引：11

作者：

Li, H. ^{[1
]}

Katz, Simeon ^{[1
]}

Vizbaras, Augustinas ^{[1
]}

Boehm, Gehard ^{[1
]}

Amann, Markus-Christian ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 24期

关键词：

Injectorless; midinfrared; quantum cascade lasers (QCLs); semiconductor lasers;

D O I：

10.1109/LPT.2010.2086390

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An injectorless quantum cascade laser design using four material alloys and emitting around 8.8 mu m at room temperature is presented. The coupling energy between the injection state and the upper laser level was increased compared to other injectorless designs to 10.6 meV. Devices with 85 repeats produce 2.0 W of pulsed output power per facet and an overall efficiency of 7.2% at 300 K. The threshold current density at room temperature is as low as 1.15 kA/cm(2) for an as-cleaved 4-mm-long device, with a characteristic temperature of 162 K.

引用

页码：1811 / 1813

页数：3

共 16 条

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