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Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsN
被引:4
作者:
Usher, B. F.
[1
]
Warminski, T.
[1
]
Dieing, T.
[1
]
Prince, Kathryn
[2
]
机构:
[1] La Trobe Univ, Dept Elect Engn, Bundoora, Vic 3086, Australia
[2] Australian Nucl Sci & Technol Org, PMB1, Menai, NSW 2234, Australia
关键词:
dilute nitrides;
secondary ion mass spectrometry;
photoluminescence;
molecular beam epitaxy;
D O I:
10.1016/j.susc.2007.06.048
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
The use of a nitrogen electron cyclotron resonance (ECR) plasma source has allowed the growth of GaAsN at GaAs substrate temperatures as high as 600 degrees C, unlike the case for growth using radio frequency (RF) plasma sources, for which there is significant loss of nitrogen at substrate temperatures as low as 480-520 degrees C. Photoluminescence (PL) intensities are significantly improved at a substrate temperature of 600 degrees C and are further improved slightly by using an ion trap to extract charged species from the beam. As the trap voltage is increased there is a reduction in the total nitrogen concentration, as measured by secondary ion mass spectrometry (SIMS), and a slight increase in the active nitrogen concentration, as measured by PL. These observations are consistent, for example, with charged and active nitrogen species together being involved in the formation of point defects, however more work is needed to clarify what may well prove to be a complex situation. (C) 2007 Elsevier B.V. All rights reserved.
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页码:5800 / 5802
页数:3
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