Atomic layer deposition synthesized TiOx thin films and their application as microbolometer active materials

被引：9

作者：

Tanrikulu, Mahmud Yusuf ^{[1
]}

Rasouli, Hamid Reza ^{[2
]}

Ghaffari, Mohammad ^{[3
]}

Topalli, Kagan ^{[2
,3
]}

Okyay, Ali Kemal ^{[2
,3
,4
]}

机构：

[1] Adana Sci & Technol Univ, Dept Elect Elect Engn, TR-01180 Adana, Turkey

[2] Bilkent Univ, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey

[3] Bilkent Univ, Natl Nanotechnol Res Ctr UNAM, TR-06800 Ankara, Turkey

[4] Bilkent Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2016年 / 34卷 / 03期

关键词：

ANATASE; OXIDE; XPS;

D O I：

10.1116/1.4947120

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper demonstrates the possible usage of TiOx thin films synthesized by atomic layer deposition as a microbolometer active material. Thin film electrical resistance is investigated as a function of thermal annealing. It is found that the temperature coefficient of resistance values can be controlled by coating/annealing processes, and the value as high as -9%/K near room temperature is obtained. The noise properties of TiOx films are characterized. It is shown that TiOx films grown by atomic layer deposition technique could have a significant potential to be used as a new active material for microbolometer-based applications. (C) 2016 American Vacuum Society.

引用

页数：5

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