Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1-x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity

被引：13

作者：

Bhattacharjee, Jayanta ^{[1
,2
]}

Ghosh, Sahadeb ^{[1
,2
,3
]}

Pokhriyal, Preeti ^{[1
,2
]}

Gangwar, Rashmi ^{[4
]}

Dutt, Rajeev ^{[2
,4
]}

Sagdeo, Archna ^{[1
,2
]}

Tiwari, Pragya ^{[1
]}

Singh, S. D. ^{[1
,2
]}

机构：

[1] Raja Ramanna Ctr Adv Technol, Synchrotrons Utilizat Sect, Indore 452013, Madhya Pradesh, India

[2] Homi Bhabha Natl Inst, Mumbai 400094, Maharashtra, India

[3] Bhagat Singh Govt PG Coll, Dept Phys, Jaora 457226, India

[4] Raja Ramanna Ctr Adv Technol, Human Resources Dev Sect, Indore 452013, Madhya Pradesh, India

来源：

AIP ADVANCES | 2021年 / 11卷 / 07期

关键词：

GAP; DEPENDENCE;

D O I：

10.1063/5.0055874

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A bandgap bowing parameter of 0.4 +/- 0.2 eV for beta-(AlxGa1-x)(2)O-3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron-phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 +/- 0.03 times of the electron-hole mean free path length has been estimated for beta-(AlxGa1-x)(2)O-3 alloys. The unit cell of beta-(AlxGa1-x)(2)O-3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for beta-(AlxGa1-x)(2)O-3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices. (c) 2021 Author(s).

引用

页数：6