Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1-x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity

被引：13
|
作者：
Bhattacharjee, Jayanta [1 ,2 ]
Ghosh, Sahadeb [1 ,2 ,3 ]
Pokhriyal, Preeti [1 ,2 ]
Gangwar, Rashmi [4 ]
Dutt, Rajeev [2 ,4 ]
Sagdeo, Archna [1 ,2 ]
Tiwari, Pragya [1 ]
Singh, S. D. [1 ,2 ]
机构：
[1] Raja Ramanna Ctr Adv Technol, Synchrotrons Utilizat Sect, Indore 452013, Madhya Pradesh, India
[2] Homi Bhabha Natl Inst, Mumbai 400094, Maharashtra, India
[3] Bhagat Singh Govt PG Coll, Dept Phys, Jaora 457226, India
[4] Raja Ramanna Ctr Adv Technol, Human Resources Dev Sect, Indore 452013, Madhya Pradesh, India
来源：
AIP ADVANCES | 2021年 / 11卷 / 07期
关键词：
GAP; DEPENDENCE;
D O I：
10.1063/5.0055874
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A bandgap bowing parameter of 0.4 +/- 0.2 eV for beta-(AlxGa1-x)(2)O-3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron-phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 +/- 0.03 times of the electron-hole mean free path length has been estimated for beta-(AlxGa1-x)(2)O-3 alloys. The unit cell of beta-(AlxGa1-x)(2)O-3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for beta-(AlxGa1-x)(2)O-3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices. (c) 2021 Author(s).
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页数：6
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