Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1-x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity

被引:13
|
作者
Bhattacharjee, Jayanta [1 ,2 ]
Ghosh, Sahadeb [1 ,2 ,3 ]
Pokhriyal, Preeti [1 ,2 ]
Gangwar, Rashmi [4 ]
Dutt, Rajeev [2 ,4 ]
Sagdeo, Archna [1 ,2 ]
Tiwari, Pragya [1 ]
Singh, S. D. [1 ,2 ]
机构
[1] Raja Ramanna Ctr Adv Technol, Synchrotrons Utilizat Sect, Indore 452013, Madhya Pradesh, India
[2] Homi Bhabha Natl Inst, Mumbai 400094, Maharashtra, India
[3] Bhagat Singh Govt PG Coll, Dept Phys, Jaora 457226, India
[4] Raja Ramanna Ctr Adv Technol, Human Resources Dev Sect, Indore 452013, Madhya Pradesh, India
关键词
GAP; DEPENDENCE;
D O I
10.1063/5.0055874
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A bandgap bowing parameter of 0.4 +/- 0.2 eV for beta-(AlxGa1-x)(2)O-3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron-phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 +/- 0.03 times of the electron-hole mean free path length has been estimated for beta-(AlxGa1-x)(2)O-3 alloys. The unit cell of beta-(AlxGa1-x)(2)O-3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for beta-(AlxGa1-x)(2)O-3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices. (c) 2021 Author(s).
引用
收藏
页数:6
相关论文
共 17 条
  • [1] First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (AlxGa1-x)2O3 alloys
    Varley, Joel B.
    JOURNAL OF MATERIALS RESEARCH, 2021, 36 (23) : 4790 - 4803
  • [2] Band Alignment of Al2O3 on α-(AlxGa1-x)2O3
    Xia, Xinyi
    Al-Mamun, Nahid Sultan
    Fares, Chaker
    Haque, Aman
    Ren, Fan
    Hassa, Anna
    von Wenckstern, Holger
    Grundmann, Marius
    Pearton, S. J.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022, 11 (02)
  • [3] Fabrication of tunable bandgap epitaxial β-(AlxGa1-x)2O3 films using a spin-coating method
    Milisavljevic, Iva
    Wu, Yiquan
    INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY, 2023, 20 (02) : 725 - 734
  • [4] Spatially Resolved Investigation of the Bandgap Variation across a β-(AlxGa1-x)2O3/β-Ga2O3 Interface by STEM-VEELS
    Chmielewski, Adrian
    Deng, Ziling
    Moradifar, Parivash
    Miao, Leixin
    Zhang, Yuewei
    Mauze, Akhil
    Lopez, Kleyser A.
    Windl, Wolfgang
    Alem, Nasim
    ACS APPLIED ELECTRONIC MATERIALS, 2022, 4 (02) : 585 - 591
  • [5] Al Composition Dependence of Band Offsets for SiO2 on α-(AlxGa1-x)2O3
    Xia, Xinyi
    Fares, Chaker
    Ren, Fan
    Hassa, Anna
    von Wenckstern, Holger
    Grundmann, Marius
    Pearton, S. J.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 10 (11)
  • [6] Determination of Al occupancy and local structure for β-(AlxGa1-x)2O3 alloys across nearly full composition range from Rietveld analysis
    Bhattacharjee, Jayanta
    Sagdeo, Archna
    Singh, S. D.
    APPLIED PHYSICS LETTERS, 2022, 120 (26)
  • [7] Optical and electronic properties of (InxGa1-x)2O3 alloys
    Shrestha, Bishal
    Mainali, Madan K.
    Dulal, Prabin
    Jamarkattel, Manoj K.
    Quader, Abdul
    Bastola, Ebin
    Phillips, Adam B.
    Heben, Michael J.
    Podraza, Nikolas J.
    JOURNAL OF APPLIED PHYSICS, 2025, 137 (03)
  • [8] Structural and optical properties of transparent, tunable bandgap semiconductor: α-(AlxCr1-x)2O3
    Jangir, Ravindra
    Srihari, Velaga
    Bhakar, Ashok
    Kamal, C.
    Yadav, A. K.
    Sagdeo, P. R.
    Kumar, Dharmendra
    Tripathi, Shilpa
    Jha, S. N.
    Ganguli, Tapas
    JOURNAL OF APPLIED PHYSICS, 2020, 128 (13)
  • [9] Toward Ultrawide Bandgap Engineering: Physical Properties of an α-(TixGa1-x)2O3 Material Library
    Petersen, Clemens
    Schultz, Thorsten
    Andreassen, Magnus
    Vogt, Sofie
    Koch, Norbert
    Grundmann, Marius
    von Wenckstern, Holger
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2025,
  • [10] Effective Band Structure and Crack Formation Analysis in Pseudomorphic Epitaxial Growth of (In x Ga1-x )2O3 Alloys: A First-Principles Study
    Fadla, Mohamed Abdelilah
    Gruning, Myrta
    Stella, Lorenzo
    ACS OMEGA, 2024, 9 (13): : 15320 - 15327