Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1-x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity

被引：13

作者：

Bhattacharjee, Jayanta ^{[1
,2
]}

Ghosh, Sahadeb ^{[1
,2
,3
]}

Pokhriyal, Preeti ^{[1
,2
]}

Gangwar, Rashmi ^{[4
]}

Dutt, Rajeev ^{[2
,4
]}

Sagdeo, Archna ^{[1
,2
]}

Tiwari, Pragya ^{[1
]}

Singh, S. D. ^{[1
,2
]}

机构：

[1] Raja Ramanna Ctr Adv Technol, Synchrotrons Utilizat Sect, Indore 452013, Madhya Pradesh, India

[2] Homi Bhabha Natl Inst, Mumbai 400094, Maharashtra, India

[3] Bhagat Singh Govt PG Coll, Dept Phys, Jaora 457226, India

[4] Raja Ramanna Ctr Adv Technol, Human Resources Dev Sect, Indore 452013, Madhya Pradesh, India

来源：

AIP ADVANCES | 2021年 / 11卷 / 07期

关键词：

GAP; DEPENDENCE;

D O I：

10.1063/5.0055874

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A bandgap bowing parameter of 0.4 +/- 0.2 eV for beta-(AlxGa1-x)(2)O-3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron-phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 +/- 0.03 times of the electron-hole mean free path length has been estimated for beta-(AlxGa1-x)(2)O-3 alloys. The unit cell of beta-(AlxGa1-x)(2)O-3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for beta-(AlxGa1-x)(2)O-3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices. (c) 2021 Author(s).

引用

页数：6

共 50 条

[1] Optical properties of (AlxGa1-x)2O3 on sapphire
Hu, Zhuangzhuang
Feng, Qian
Zhang, Jincheng
Li, Fuguo
Li, Xiang
Feng, Zhaoqing
Zhang, Chunfu
Hao, Yue
SUPERLATTICES AND MICROSTRUCTURES, 2018, 114 : 82 - 88
[2] Donor doping of corundum (AlxGa1-x)2O3
Wickramaratne, Darshana
Varley, Joel B.
Lyons, John L.
APPLIED PHYSICS LETTERS, 2022, 121 (04)
[3] Prospects for n-type doping of (AlxGa1-x)2O3 alloys
Varley, Joel B.
Perron, Aurelien
Lordi, Vincenzo
Wickramaratne, Darshana
Lyons, John L.
APPLIED PHYSICS LETTERS, 2020, 116 (17)
[4] Electron mobility in ordered β-(AlxGa1-x)2O3 alloys from first-principles
Duan, Xinlei
Wang, Tianyu
Fu, Zhiwei
Yang, Jia-Yue
Liu, Linhua
APPLIED PHYSICS LETTERS, 2022, 121 (04)
[5] First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (AlxGa1-x)2O3 alloys
Varley, Joel B.
JOURNAL OF MATERIALS RESEARCH, 2021, 36 (23) : 4790 - 4803
[6] High-frequency and below bandgap anisotropic dielectric constants in α-(AlxGa1-x)2O3 (0 ≤ x ≤ 1)
Hilfiker, Matthew
Kilic, Ufuk
Stokey, Megan
Jinno, Riena
Cho, Yongjin
Xing, Huili Grace
Jena, Debdeep
Korlacki, Rafal
Schubert, Mathias
APPLIED PHYSICS LETTERS, 2021, 119 (09) : 1ENG
[7] Characterization of band offset in α-(AlxGa1-x)2O3 heterostructures
Uchida, Takayuki
Jinno, Riena
Takemoto, Shu
Kaneko, Kentaro
Fujita, Shizuo
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
[8] Effective electronic band structure of monoclinic β - (AlxGa1-x)2O3 alloy semiconductor
Sharma, Ankit
Singisetti, Uttam
AIP ADVANCES, 2023, 13 (01)
[9] Band Gap and Band Offset of Ga2O3 and (AlxGa1-x)2O3 Alloys
Wang, Tianshi
Li, Wei
Ni, Chaoying
Janotti, Anderson
PHYSICAL REVIEW APPLIED, 2018, 10 (01):
[10] Band Alignment of Al2O3 on α-(AlxGa1-x)2O3
Xia, Xinyi
Al-Mamun, Nahid Sultan
Fares, Chaker
Haque, Aman
Ren, Fan
Hassa, Anna
von Wenckstern, Holger
Grundmann, Marius
Pearton, S. J.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2022, 11 (02)

← 1 2 3 4 5 →